SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME: abstract simplified (18040927)

• This abstract for appeared for patent application number 18040927 Titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME'

Simplified Explanation

The abstract describes a process where a substrate with a GaN surface is placed in a solution containing potassium hydroxide and a plating catalyst metal salt. The substrate is then exposed to ultraviolet light, causing a catalyst metal to be deposited on the GaN surface. Finally, a metal film is formed on the GaN surface using electroless plating.

Original Abstract Submitted

A substrate () having a GaN surface () is immersed in a catalyst metal solution () containing potassium hydroxide and a plating catalyst metal salt while being irradiated with ultraviolet light to deposit a catalyst metal () on the GaN surface (). A metal film () is formed on the GaN surface () having the catalyst metal () deposited thereon by electroless plating.