Robert bosch gmbh (20240136435). FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION simplified abstract
Contents
- 1 FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION
Organization Name
Inventor(s)
Daniel Krebs of Aufhausen (DE)
Dick Scholten of Stuttgart (DE)
FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136435 titled 'FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION
Simplified Explanation
The abstract describes a field-effect transistor with specific layers and doping types, as well as a gate trench for controlling the flow of current.
- Source layer doped with first type
- Drain layer doped with first type
- Channel layer between source and drain layers
- Gate trench for controlling current flow
- Channel layer has lower doping of second type farther from gate trench
Potential Applications
The technology described in this patent application could be used in various electronic devices such as smartphones, computers, and other integrated circuits where efficient control of current flow is essential.
Problems Solved
This technology solves the problem of improving the performance and efficiency of field-effect transistors by optimizing the doping levels in the channel layer, resulting in better control of current flow.
Benefits
The benefits of this technology include enhanced performance, increased efficiency, and improved reliability of electronic devices utilizing field-effect transistors with the described structure.
Potential Commercial Applications
- "Optimizing Doping Levels in Field-Effect Transistors for Enhanced Performance and Efficiency"
Possible Prior Art
There may be prior art related to optimizing doping levels in field-effect transistors for improved performance and efficiency, but specific examples are not provided in the abstract.
Unanswered Questions
How does this technology compare to existing field-effect transistor designs in terms of performance and efficiency?
The abstract does not provide a direct comparison with existing designs, so it is unclear how this technology stacks up against current solutions.
Are there any limitations or drawbacks to implementing this technology in practical applications?
The abstract does not mention any potential limitations or drawbacks of using this technology in real-world electronic devices, leaving this question unanswered.
Original Abstract Submitted
a field-effect transistor. the field-effect transistor includes: a source layer doped according to a first type, a drain layer doped according to a first type, a channel layer located vertically between the source layer doped according to the first type and the drain layer doped according to the first type, and a gate trench which extends vertically from the source layer doped according to the first type to the drift layer doped according to the first type and adjoins the channel layer. the channel layer has, at least on average, a lower doping of the second type and a higher doping of the first type in a region that is more than a specified distance from the gate trench than in a region that is less than the specified distance from the gate trench. methods for production are also described.
