View source for Qualcomm incorporated (20240136357). OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION simplified abstract

=OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION=


==Organization Name==

[[:Category:qualcomm incorporated|qualcomm incorporated]]


[[Category:qualcomm incorporated]]

==Inventor(s)==

[[:Category:Xia Li of San Diego CA (US)|Xia Li of San Diego CA (US)]][[Category:Xia Li of San Diego CA (US)]]

[[:Category:Bin Yang of San Diego CA (US)|Bin Yang of San Diego CA (US)]][[Category:Bin Yang of San Diego CA (US)]]

[[:Category:Haining Yang of San Diego CA (US)|Haining Yang of San Diego CA (US)]][[Category:Haining Yang of San Diego CA (US)]]

==OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240136357 titled 'OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION

==Simplified Explanation==

The abstract describes a vertical transport field effect transistor (VTFET) with multiple FET structures on a substrate, including n-type and p-type FET structures with fins to transport charge carriers vertically.

* The VTFET includes multiple FET structures on a substrate.
* The FET structures consist of n-type and p-type FET structures oriented in different plane directions.
* Each FET structure has a fin with a fin height, h, for transporting charge carriers vertically along the fin height.

== Potential Applications ==
The technology could be applied in vertical transport devices, such as high-speed transistors, memory devices, and power electronics.

== Problems Solved ==
The VTFET addresses the need for efficient vertical charge carrier transport in semiconductor devices, enabling improved performance and functionality.

== Benefits ==
The VTFET offers enhanced vertical charge carrier transport capabilities, potentially leading to faster and more efficient electronic devices.

== Potential Commercial Applications ==
"Vertical Transport Field Effect Transistor (VTFET) for High-Speed Transistors and Power Electronics"

== Possible Prior Art ==
There may be prior art related to vertical charge carrier transport in semiconductor devices, but specific examples are not provided in the abstract.

== Unanswered Questions ==

=== How does the fin height impact the performance of the VTFET? ===
The abstract mentions the fin height as a defining factor, but it does not elaborate on how different fin heights may affect the transistor's operation.

=== Are there any limitations to the vertical charge carrier transport in the VTFET? ===
While the abstract highlights the vertical transport capability of the VTFET, it does not mention any potential limitations or challenges that may arise in practical applications.


==Original Abstract Submitted==

a vertical transport field effect transistor (vtfet) comprising: a plurality of fet structures on a substrate; the plurality of fet structures comprising: a first n-type fet structure oriented in a first plane direction relative to the substrate; and a first p-type fet structure oriented in a second plane direction relative to the substrate; wherein the first n-type fet structure and the first p-type fet structure each comprises a fin having a fin height, h, wherein h defines the fin height orthogonal to a surface of the substrate, each fin being configured to transport charge carriers orthogonal to the surface of the substrate along the fin height.



[[Category:H01L27/092]]
[[Category:H01L21/822]]
[[Category:H01L21/8238]]
[[Category:H01L29/417]]
[[Category:H01L29/66]]
[[Category:H01L29/78]]