Panasonic intellectual property management co., ltd. (20240121530). LIGHT DETECTOR simplified abstract
Contents
- 1 LIGHT DETECTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 LIGHT DETECTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
LIGHT DETECTOR
Organization Name
panasonic intellectual property management co., ltd.
Inventor(s)
Kentaro Nakanishi of Nara (JP)
LIGHT DETECTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240121530 titled 'LIGHT DETECTOR
Simplified Explanation
The abstract describes a patent application for a light detector with APDs (Avalanche Photodiodes) on a p-type semiconductor substrate. The detector includes a light receiving portion, a peripheral portion, a back electrode, and a first separation portion.
- Light detector with APDs on a p-type semiconductor substrate
- Light receiving portion with APDs and peripheral portion on first principal surface
- Back electrode on second principal surface
- First separation portion between light receiving and peripheral portions
- APDs with n-type region and p-epitaxial layer on first principal surface side
- Peripheral portion with n-type MISFET at p-well and n-well surrounding p-well
Potential Applications
The technology can be used in:
- Photodetectors
- Optical communication systems
- Imaging devices
Problems Solved
- Improved light detection efficiency
- Enhanced signal-to-noise ratio
- Better performance in low-light conditions
Benefits
- Higher sensitivity to light
- Reduced noise interference
- Increased reliability and accuracy in light detection
Potential Commercial Applications
- Security systems
- Medical imaging devices
- Scientific instruments
Possible Prior Art
One possible prior art is the use of APDs in light detectors for improved sensitivity and performance.
Unanswered Questions
How does the presence of the p-type semiconductor substrate affect the overall performance of the light detector?
The p-type semiconductor substrate may play a crucial role in the efficiency and functionality of the detector, but the specific impact is not detailed in the abstract.
What are the specific advantages of having a first separation portion between the light receiving portion and the peripheral portion?
The abstract mentions the presence of a first separation portion, but does not elaborate on the benefits or reasons for its inclusion in the design of the light detector.
Original Abstract Submitted
a light detector is configured such that a light receiving portion having apds and a peripheral portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral portion. the apd has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a z-direction. the peripheral portion has an n-type misfet provided at a p-well and an n-well provided to surround entire side and bottom portions of the p-well.
