Mitsubishi electric corporation (20240136439). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does the specific crystal structure of the semiconductor layer impact the performance of the fin transistors in the device?
- 1.11 What are the implications of the angular spacing of 60° or 120° between adjacent fin transistors on the overall efficiency of the semiconductor device?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
mitsubishi electric corporation
Inventor(s)
Kunihiko Nishimura of Tokyo (JP)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136439 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with a semiconductor layer, an element region, and fin transistors. The semiconductor layer is formed on the principal surface of the substrate with a specific crystal structure. The element region consists of unit element regions where the fin transistors are formed, extending radially from the center towards the outer periphery of the element region.
- The semiconductor layer has a crystal structure with specific crystal orientations on a crystal plane corresponding to the principal surface of the substrate.
- The fin transistors are formed in the semiconductor layer within the unit element regions, with adjacent transistors having specific angular spacings of 60° or 120°.
Potential Applications
This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as high-performance computing, communication systems, and sensor technologies.
Problems Solved
This innovation solves the challenge of optimizing the layout and design of fin transistors in a semiconductor device to enhance performance and efficiency.
Benefits
The benefits of this technology include improved transistor performance, increased device density, and enhanced overall functionality of semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology include the production of next-generation processors, memory devices, and integrated circuits for consumer electronics, automotive systems, and industrial applications.
Possible Prior Art
One possible prior art could be the development of semiconductor devices with fin transistors arranged in specific orientations to optimize performance and functionality.
Unanswered Questions
How does the specific crystal structure of the semiconductor layer impact the performance of the fin transistors in the device?
The specific crystal structure of the semiconductor layer influences the electrical properties and carrier mobility of the fin transistors, ultimately affecting their performance in the device.
What are the implications of the angular spacing of 60° or 120° between adjacent fin transistors on the overall efficiency of the semiconductor device?
The angular spacing between adjacent fin transistors plays a crucial role in minimizing interference and maximizing the packing density of transistors, leading to improved efficiency and performance of the semiconductor device.
Original Abstract Submitted
a semiconductor device includes a substrate, a semiconductor layer, an element region, and fin transistors. the substrate includes a principal surface. the semiconductor layer is formed as a surface layer or on the principal surface of the substrate, the surface layer being the principal surface of the substrate. the semiconductor layer has a crystal structure in which an angle between two of crystal orientations with equivalent relationships on a crystal plane having a correspondence with the principal surface of the substrate is 60 degrees or 120 degrees. the element region includes unit element regions formed on the principal surface of the substrate. the fin transistors are formed in the semiconductor layer, in the respective unit element regions. the fin transistors radially extend from a center toward an outer periphery of the element region. adjacent two of the fin transistors have a spacing with a 60� angle or a 120� angle.
