Micron technology, inc. (20240130128). SINGLE CRYSTAL SILICON CORES FOR STACKED MEMORY CELLS simplified abstract

SINGLE CRYSTAL SILICON CORES FOR STACKED MEMORY CELLS

Organization Name

micron technology, inc.

Inventor(s)

Yongjun Hu of Boise ID (US)

SINGLE CRYSTAL SILICON CORES FOR STACKED MEMORY CELLS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240130128 titled 'SINGLE CRYSTAL SILICON CORES FOR STACKED MEMORY CELLS

Simplified Explanation

The patent application describes methods, systems, and devices for single crystal silicon cores for stacked memory cells. Memory devices are formed using silicon cores associated with multiple memory cells, with sleeves of memory materials and conductive materials around each core.

• Silicon cores associated with multiple memory cells
• Sleeves of memory materials and conductive materials around each silicon core
• Memory materials and conductive materials formed from larger sleeves of material
• Etching into sections of memory materials and conductive materials along the silicon cores

Potential Applications

The technology described in the patent application could be applied in the development of high-density memory devices, such as solid-state drives, embedded memory in electronic devices, and advanced computing systems.

Problems Solved

This technology solves the problem of increasing the memory density in devices by utilizing single crystal silicon cores for stacked memory cells, allowing for more memory cells to be associated with each core.

Benefits

The use of single crystal silicon cores for stacked memory cells provides increased memory density, improved performance, and potentially lower power consumption in memory devices.

Potential Commercial Applications

The technology could have commercial applications in the semiconductor industry for the development of next-generation memory devices, leading to advancements in data storage, computing systems, and consumer electronics.

Possible Prior Art

One possible prior art could be the use of multi-level cell (MLC) or triple-level cell (TLC) memory technology in memory devices to increase memory density. However, the specific use of single crystal silicon cores for stacked memory cells as described in the patent application may be a novel approach.

How does this technology compare to existing memory technologies in terms of performance and reliability?

The article does not provide a direct comparison between this technology and existing memory technologies in terms of performance and reliability. Further research and testing would be needed to determine the advantages and limitations of this approach.

What are the potential challenges in implementing this technology on a large scale for commercial production?

The article does not address the potential challenges in implementing this technology on a large scale for commercial production. Factors such as manufacturing costs, scalability, and compatibility with existing production processes would need to be considered.

Original Abstract Submitted

methods, systems, and devices for single crystal silicon cores for stacked memory cells are described. a memory device may be formed using silicon cores that are each associated with a set of multiple memory cells. multiple silicon cores may extend along a first direction, and multiple sleeves of memory materials and conductive materials may be formed around each silicon core. each sleeve of memory materials may be associated with a respective memory cell and each conductive material may be associated with a word line, such that each silicon core may be associated with multiple memory cells. the respective sleeves of memory materials and conductive materials may be formed from larger sleeves of material that may be etched into sections of the memory materials and the conductive materials along the silicon cores.