Micron technology, inc. (20240130124). ELECTRONIC DEVICES COMPRISING ADJOINING OXIDE MATERIALS AND RELATED SYSTEMS simplified abstract
Contents
- 1 ELECTRONIC DEVICES COMPRISING ADJOINING OXIDE MATERIALS AND RELATED SYSTEMS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ELECTRONIC DEVICES COMPRISING ADJOINING OXIDE MATERIALS AND RELATED SYSTEMS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
ELECTRONIC DEVICES COMPRISING ADJOINING OXIDE MATERIALS AND RELATED SYSTEMS
Organization Name
Inventor(s)
Richard J. Hill of Boise ID (US)
Gurtej S. Sandhu of Boise ID (US)
Byeung Chul Kim of Boise ID (US)
Francois H. Fabreguette of Boise ID (US)
Chris M. Carlson of Nampa ID (US)
Michael E. Koltonski of Boise ID (US)
Shane J. Trapp of Boise ID (US)
ELECTRONIC DEVICES COMPRISING ADJOINING OXIDE MATERIALS AND RELATED SYSTEMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240130124 titled 'ELECTRONIC DEVICES COMPRISING ADJOINING OXIDE MATERIALS AND RELATED SYSTEMS
Simplified Explanation
The patent application describes an electronic device with a unique structure involving alternating dielectric and conductive materials in the cell region, as well as storage node segments and a tunnel region in the pillar region.
- The electronic device comprises a cell region with stacks of alternating dielectric and conductive materials.
- The pillar region adjacent to the cell region includes storage node segments, oxide materials, and a tunnel region.
- The storage node segments are separated by a vertical portion of the tunnel region.
- A high-k dielectric material is present adjacent to the conductive materials of the cell region and the adjoining oxide materials of the pillar region.
Potential Applications
This technology could be applied in:
- Memory devices
- Integrated circuits
- Semiconductor devices
Problems Solved
This technology helps in:
- Improving data storage capacity
- Enhancing device performance
- Increasing device reliability
Benefits
The benefits of this technology include:
- Higher data storage density
- Faster data access speeds
- Improved overall device efficiency
Potential Commercial Applications
This technology could be commercially used in:
- Consumer electronics
- Data storage devices
- Telecommunications equipment
Possible Prior Art
One possible prior art for this technology could be the use of similar structures in memory devices or semiconductor devices in the past.
Unanswered Questions
How does this technology compare to existing memory device structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing memory device structures to evaluate performance and efficiency differences.
What are the potential challenges in scaling up the production of electronic devices using this technology for mass commercial use?
The article does not address the potential challenges in scaling up production for mass commercial use of electronic devices utilizing this technology.
Original Abstract Submitted
an electronic device comprising a cell region comprising stacks of alternating dielectric materials and conductive materials. a pillar region is adjacent to the cell region and comprises storage node segments adjacent to adjoining oxide materials and adjacent to a tunnel region. the storage node segments are separated by a vertical portion of the tunnel region. a high-k dielectric material is adjacent to the conductive materials of the cell region and to the adjoining oxide materials of the pillar region. additional electronic devices are disclosed, as are methods of forming an electronic device and related systems.
