View source for Micron technology, inc. (20240128426). VERTICAL SOLID-STATE TRANSDUCERS AND HIGH VOLTAGE SOLID-STATE TRANSDUCERS HAVING BURIED CONTACTS AND ASSOCIATED SYSTEMS AND METHODS simplified abstract

=VERTICAL SOLID-STATE TRANSDUCERS AND HIGH VOLTAGE SOLID-STATE TRANSDUCERS HAVING BURIED CONTACTS AND ASSOCIATED SYSTEMS AND METHODS=


==Organization Name==

[[:Category:micron technology, inc.|micron technology, inc.]]


[[Category:micron technology, inc.]]

==Inventor(s)==

[[:Category:Vladimir Odnoblyudov of Eagle ID (US)|Vladimir Odnoblyudov of Eagle ID (US)]][[Category:Vladimir Odnoblyudov of Eagle ID (US)]]

[[:Category:Martin F. Schubert of Mountain View CA (US)|Martin F. Schubert of Mountain View CA (US)]][[Category:Martin F. Schubert of Mountain View CA (US)]]

==VERTICAL SOLID-STATE TRANSDUCERS AND HIGH VOLTAGE SOLID-STATE TRANSDUCERS HAVING BURIED CONTACTS AND ASSOCIATED SYSTEMS AND METHODS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240128426 titled 'VERTICAL SOLID-STATE TRANSDUCERS AND HIGH VOLTAGE SOLID-STATE TRANSDUCERS HAVING BURIED CONTACTS AND ASSOCIATED SYSTEMS AND METHODS

==Simplified Explanation==

The abstract describes a patent application for solid-state transducers (SSTs) with buried contacts, including a transducer structure with first and second semiconductor materials, first and second contacts, and interconnects covered with package materials.

* SSTs with buried contacts
* Transducer structure with first and second semiconductor materials
* Plurality of first contacts electrically coupled to the first semiconductor material
* Plurality of second contacts electrically coupled to the second semiconductor material
* Interconnects formed between first and second contacts
* Package materials covering the interconnects

== Potential Applications ==
The technology described in this patent application could be applied in various fields such as medical devices, automotive sensors, industrial automation, and consumer electronics.

== Problems Solved ==
This technology solves the problem of improving the performance and reliability of solid-state transducers by providing buried contacts that enhance electrical connections and reduce interference.

== Benefits ==
The benefits of this technology include increased efficiency, improved signal quality, enhanced durability, and reduced maintenance requirements for devices utilizing solid-state transducers with buried contacts.

== Potential Commercial Applications ==
The potential commercial applications of this technology include medical imaging equipment, automotive safety systems, industrial monitoring devices, and consumer electronics products.

== Possible Prior Art ==
One possible prior art for this technology could be the development of solid-state transducers with surface contacts instead of buried contacts, which may have limitations in terms of performance and reliability.

=== Unanswered Questions ===

=== How does this technology compare to traditional transducer designs with surface contacts? ===
This article does not provide a direct comparison between the technology described and traditional transducer designs with surface contacts. A comparative analysis of performance, reliability, and cost-effectiveness would be beneficial for potential users and manufacturers.

=== What are the specific manufacturing processes involved in creating solid-state transducers with buried contacts? ===
The article does not delve into the specific manufacturing processes used to create solid-state transducers with buried contacts. Understanding the fabrication techniques and materials involved could provide insights into the scalability and feasibility of implementing this technology on a larger scale.


==Original Abstract Submitted==

solid-state transducers (“ssts”) and vertical high voltage ssts having buried contacts are disclosed herein. an sst die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. the sst can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. an interconnect can be formed between at least one first contact and one second contact. the interconnects can be covered with a plurality of package materials.



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