Micron technology, inc. (20240128207). NAND FLASH BLOCK ARCHITECTURE ENHANCEMENT TO PREVENT BLOCK LIFTING simplified abstract

NAND FLASH BLOCK ARCHITECTURE ENHANCEMENT TO PREVENT BLOCK LIFTING

Organization Name

micron technology, inc.

Inventor(s)

Martin Jared Barclay of Middleton ID (US)

Mark Tunik of Portland OR (US)

NAND FLASH BLOCK ARCHITECTURE ENHANCEMENT TO PREVENT BLOCK LIFTING - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240128207 titled 'NAND FLASH BLOCK ARCHITECTURE ENHANCEMENT TO PREVENT BLOCK LIFTING

Simplified Explanation

The abstract describes a three-dimensional memory device with a stack of alternating insulating layers, conductive layers, and memory cell strings extending through them, along with sets of pillars terminating at plugs in the source plate.

• The device comprises a source plate with plugs, a stack with memory cell strings, and sets of pillars terminating at plugs in the source plate.
• The memory cells are arranged in a three-dimensional structure, allowing for increased storage capacity and efficiency.
• The pillars provide structural support and electrical connections within the device.

Potential Applications

The technology could be applied in:

• High-capacity data storage devices
• Advanced computing systems
• Memory-intensive applications like artificial intelligence and machine learning

Problems Solved

This technology addresses:

• Increasing demand for higher storage capacity in smaller devices
• Improving data processing speed and efficiency
• Enhancing overall performance of memory devices

Benefits

The benefits of this technology include:

• Increased storage capacity in a compact form factor
• Faster data processing and retrieval
• Enhanced reliability and durability of memory devices

Potential Commercial Applications

The potential commercial applications of this technology could include:

• Solid-state drives
• Data centers
• Consumer electronics like smartphones and tablets

Possible Prior Art

One possible prior art for this technology could be the development of three-dimensional memory structures in the semiconductor industry.

How does this technology compare to traditional two-dimensional memory devices in terms of performance and efficiency?

This article does not provide a direct comparison between the new three-dimensional memory device and traditional two-dimensional memory devices. It would be interesting to see a side-by-side analysis of the performance metrics of both types of memory devices to understand the advantages of the new technology.

What are the potential challenges in scaling up the production of these three-dimensional memory devices for mass commercial use?

The article does not address the scalability of production for these three-dimensional memory devices. It would be important to consider the challenges and limitations in scaling up manufacturing processes to meet the demands of mass commercial use.

Original Abstract Submitted

disclosed is a three-dimensional memory device. in one embodiment, a device is disclosed comprising a source plate; plugs fabricated on or partially formed in the source plate; a stack formed on the substrate and plugs comprising alternating insulating layers and conductive layers and channel-material strings of memory cells extending through the insulating layers and conductive layers; a first set of pillars extending through the stack formed by a process including etching the alternating insulating layers and conductive layers and depositing a pillar material therein, wherein each pillar in the first set of pillars terminates atop a respective plug in the plurality of plugs; and a second set of pillars extending through the stack formed by a process including etching the alternating insulating layers and conductive layers and depositing a pillar material therein, wherein each pillar in the second set of pillars terminates in the source plate.