Micron technology, inc. (20240128189). ANTIFUSE DEVICE HAVING INTERCONNECT JUMPER simplified abstract
Contents
- 1 ANTIFUSE DEVICE HAVING INTERCONNECT JUMPER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ANTIFUSE DEVICE HAVING INTERCONNECT JUMPER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
ANTIFUSE DEVICE HAVING INTERCONNECT JUMPER
Organization Name
Inventor(s)
Christopher G. Wieduwilt of Boise ID (US)
James S. Rehmeyer of Boise ID (US)
ANTIFUSE DEVICE HAVING INTERCONNECT JUMPER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128189 titled 'ANTIFUSE DEVICE HAVING INTERCONNECT JUMPER
Simplified Explanation
The abstract describes an antifuse device with a gate, doping regions, a channel, and an interconnection jumper.
- The device includes a gate with a gate dielectric layer.
- There is a first doping region connected to one end of the gate and a second doping region connected to the opposite end of the gate.
- A channel is located under the gate, connecting the first and second doping regions.
- An interconnection jumper electrically connects the first and second doping regions.
Potential Applications
The antifuse device could be used in:
- Integrated circuits
- Non-volatile memory devices
Problems Solved
This technology helps in:
- Providing reliable electrical connections
- Preventing unintended electrical paths
Benefits
The antifuse device offers:
- Improved device performance
- Enhanced reliability
Potential Commercial Applications
The technology could be applied in:
- Semiconductor manufacturing industry
- Electronics industry
Possible Prior Art
One example of prior art in this field is the use of antifuse devices in programmable logic devices.
Unanswered Questions
How does the device handle high voltage applications?
The article does not mention the device's performance under high voltage conditions.
What is the expected lifespan of the device?
The article does not provide information on the longevity of the antifuse device.
Original Abstract Submitted
an antifuse device, including a gate having a gate dielectric layer; a first doping region connected to a first end of the gate; a second doping region connected to a second end of the gate, the second end being opposite to the first end of the gate; a channel that is disposed under the gate and that connects the first doping region and the second doping region; and an interconnection jumper that electrically connects the first doping region and the second doping region.
