Micron technology, inc. (20240128182). DIELECTRIC INTERPOSER WITH ELECTRICAL-CONNECTION CUT-IN simplified abstract

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DIELECTRIC INTERPOSER WITH ELECTRICAL-CONNECTION CUT-IN

Organization Name

micron technology, inc.

Inventor(s)

Chin Hui Chong of Singapore (SG)

Seng Kim Ye of Singapore (SG)

Hong Wan Ng of Singapore (SG)

Kelvin Aik Boo Tan of Singapore (SG)

DIELECTRIC INTERPOSER WITH ELECTRICAL-CONNECTION CUT-IN - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240128182 titled 'DIELECTRIC INTERPOSER WITH ELECTRICAL-CONNECTION CUT-IN

Simplified Explanation

The abstract describes a semiconductor device assembly that includes a base layer, a dielectric interposer with first and second outer surfaces, a first electrical-connection cut-in, and one or more first electrical connections.

  • The semiconductor device assembly includes:
    • Base layer
    • Dielectric interposer with first and second outer surfaces
    • First electrical-connection cut-in
    • One or more first electrical connections

Potential Applications

The technology described in this patent application could be applied in: - Semiconductor manufacturing - Electronics industry - Communication devices

Problems Solved

This technology helps to: - Improve electrical connections in semiconductor devices - Enhance performance and reliability of electronic components - Enable more compact and efficient device designs

Benefits

The benefits of this technology include: - Increased functionality of semiconductor devices - Enhanced signal transmission capabilities - Improved overall device performance

Potential Commercial Applications

The potential commercial applications of this technology could be in: - Consumer electronics - Telecommunications equipment - Automotive electronics

Possible Prior Art

One possible prior art for this technology could be: - Existing semiconductor device assembly designs - Previous methods of creating electrical connections in electronic components

Unanswered Questions

How does this technology compare to existing semiconductor device assembly designs?

This article does not provide a direct comparison to existing semiconductor device assembly designs.

What specific improvements in performance can be expected from implementing this technology?

The article does not delve into the specific performance improvements that can be expected from implementing this technology.


Original Abstract Submitted

implementations described herein relate to various semiconductor device assemblies. in some implementations, a semiconductor device assembly may include a base layer, a dielectric interposer coupled to the base layer and including a first outer surface facing the base layer and an opposing second outer surface facing away from the base layer and spaced apart from the first outer surface in a direction, a first electrical-connection cut-in in the second outer surface that extends, in the direction, toward the first outer surface, and one or more first electrical connections disposed within the first electrical-connection cut-in such that at least a portion of the one or more first electrical connections does not extend, in the direction, beyond the second outer surface.