View source for Micron technology, inc. (20240127902). INDICATING A STATUS OF A MEMORY BUILT-IN SELF-TEST simplified abstract

=INDICATING A STATUS OF A MEMORY BUILT-IN SELF-TEST=


==Organization Name==

[[:Category:micron technology, inc.|micron technology, inc.]]


[[Category:micron technology, inc.]]

==Inventor(s)==

[[:Category:Scott E. Schaefer of Boise ID (US)|Scott E. Schaefer of Boise ID (US)]][[Category:Scott E. Schaefer of Boise ID (US)]]

==INDICATING A STATUS OF A MEMORY BUILT-IN SELF-TEST - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240127902 titled 'INDICATING A STATUS OF A MEMORY BUILT-IN SELF-TEST

==Simplified Explanation==

The patent application describes a method for performing a memory built-in self-test and indicating the status of the test. The memory device reads bits stored in a mode register to determine if the self-test is enabled, sets a DMI bit to a first value, performs the self-test, and then sets the DMI bit to a second value upon completion.

* Memory device reads bits in mode register to check if self-test is enabled
* Sets DMI bit to first value and performs self-test if enabled
* Sets DMI bit to second value upon completion of self-test

== Potential Applications ==
This technology could be applied in various industries where memory testing is crucial, such as:
* Computer hardware manufacturing
* Aerospace and defense systems
* Automotive electronics

== Problems Solved ==
The technology addresses the need for efficient memory testing methods by automating the process and providing a clear indication of the test status.

== Benefits ==
* Improved reliability of memory devices
* Streamlined memory testing process
* Enhanced quality control in manufacturing

== Potential Commercial Applications ==
Optimizing Memory Built-In Self-Test for Enhanced Reliability

== Possible Prior Art ==
There may be existing methods for memory testing, but the specific approach outlined in this patent application would need to be further researched to determine its novelty.

=== Unanswered Questions ===

=== How does this technology compare to traditional memory testing methods? ===
This article does not provide a direct comparison between this technology and traditional memory testing methods. Further research would be needed to understand the specific advantages and disadvantages of this approach.

=== What are the potential limitations of this technology in real-world applications? ===
The article does not address any potential limitations or challenges that may arise when implementing this technology in practical settings. Further analysis and testing would be necessary to identify and mitigate any such issues.


==Original Abstract Submitted==

implementations described herein relate to performing a memory built-in self-test and indicating a status of the memory built-in self-test. a memory device may read one or more bits, associated with a memory built-in self-test, that are stored in a mode register of the memory device. the memory device may identify, based on the one or more bits, that the memory built-in self-test is enabled. the memory device may set a dmi bit of the memory device to a first value and perform the memory built-in self-test based on identifying that the memory built-in self-test is enabled. the memory device may set the dmi bit of the memory device to a second value based on a completion of the memory built-in self-test.



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