Micron technology, inc. (20240127877). DIFFERENTIAL STORAGE IN MEMORY ARRAYS simplified abstract
Contents
- 1 DIFFERENTIAL STORAGE IN MEMORY ARRAYS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DIFFERENTIAL STORAGE IN MEMORY ARRAYS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
DIFFERENTIAL STORAGE IN MEMORY ARRAYS
Organization Name
Inventor(s)
Durai Vishak Nirmal Ramaswamy of Boise ID (US)
Giorgio Servalli of Fara Gera d'Adda (IT)
Angelo Visconti of Appiano Gentile (IT)
Marcello Mariani of Milano (IT)
Alessandro Calderoni of Boise ID (US)
DIFFERENTIAL STORAGE IN MEMORY ARRAYS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240127877 titled 'DIFFERENTIAL STORAGE IN MEMORY ARRAYS
Simplified Explanation
The abstract describes methods, systems, and devices for differential storage in memory arrays, utilizing pairs of memory cells to store a single logic state and sense amplifiers to detect the logic state based on voltage differences between the cells.
- Memory device includes pairs of memory cells storing a single logic state.
- Sense amplifiers detect logic state based on voltage difference between cells.
- Memory cells within a single array on a single level, each pair coupled with the same word line and plate line.
- Memory cells in each pair coupled with different digit lines.
Potential Applications
The technology could be applied in various memory storage devices, such as computer RAM, embedded systems, and data storage systems.
Problems Solved
This technology helps in increasing memory storage density, improving memory access speed, and reducing power consumption in memory devices.
Benefits
The benefits of this technology include enhanced memory performance, increased data storage capacity, and improved energy efficiency in memory arrays.
Potential Commercial Applications
The technology could find applications in the semiconductor industry, memory chip manufacturing, and electronic device production, leading to the development of more efficient and high-performance memory products.
Possible Prior Art
One possible prior art could be the use of differential sensing techniques in memory arrays to improve data storage and retrieval efficiency.
Unanswered Questions
How does this technology compare to existing memory storage solutions in terms of speed and efficiency?
This article does not provide a direct comparison with existing memory storage solutions, so it is unclear how this technology performs in relation to speed and efficiency.
What are the potential limitations or challenges in implementing this technology on a large scale in memory devices?
The article does not address the potential limitations or challenges that may arise when implementing this technology on a large scale in memory devices, leaving room for further exploration and analysis.
Original Abstract Submitted
methods, systems, and devices for differential storage in memory arrays are described. a memory device may include pairs of memory cells configured to store a single logic state (e.g., a single bit of information). additionally, the memory device may include sense amplifiers configured to sense the logic state based on a difference between a voltage of a first ferroelectric memory cell of the pair of memory cells and a voltage of a second ferroelectric memory cell of the pair of memory cells. in one example, the memory device may include pairs of memory cells within a single memory array on a single level. here, each memory cell pair may include a memory cells that are each coupled with a same word line and plate line. additionally, each memory cell pair may include memory cells each coupled with different digit lines.
