View source for Micron technology, inc. (20240126164). Reticle Constructions and Photo-Processing Methods simplified abstract

=Reticle Constructions and Photo-Processing Methods=


==Organization Name==

[[:Category:micron technology, inc.|micron technology, inc.]]


[[Category:micron technology, inc.]]

==Inventor(s)==

[[:Category:Chung-Yi Lee of Boise ID (US)|Chung-Yi Lee of Boise ID (US)]][[Category:Chung-Yi Lee of Boise ID (US)]]

[[:Category:Reha M. Bafrali of Mountain View CA (US)|Reha M. Bafrali of Mountain View CA (US)]][[Category:Reha M. Bafrali of Mountain View CA (US)]]

==Reticle Constructions and Photo-Processing Methods - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240126164 titled 'Reticle Constructions and Photo-Processing Methods

==Simplified Explanation==

The patent application describes a reticle with different pattern features that require different optimal doses of actinic radiation. The larger second pattern features have a configuration with a central region of different opacity than the outer region, balancing the optimal doses to be within about 5% of each other.

* Reticle with first and second pattern features
* First optimal dose of actinic radiation associated with first pattern features
* Second optimal dose of actinic radiation associated with second pattern features
* Second pattern features are larger than first pattern features
* Configuration of second pattern features includes central region of different opacity than outer region
* Balancing of optimal doses within about 5% of each other

== Potential Applications ==
The technology described in the patent application could be applied in the semiconductor industry for photolithography processes.

== Problems Solved ==
This technology solves the problem of achieving optimal doses of actinic radiation for different pattern features on a reticle.

== Benefits ==
The benefits of this technology include improved accuracy and efficiency in photo-processing methods.

== Potential Commercial Applications ==
One potential commercial application of this technology is in the manufacturing of advanced semiconductor devices.

== Possible Prior Art ==
One possible prior art could be the use of different exposure doses in photolithography processes, but the specific configuration of pattern features described in this patent application may be novel.

== Unanswered Questions ==

=== How does the configuration of the second pattern features affect the overall performance of the reticle? ===
The configuration of the second pattern features is crucial in balancing the optimal doses of actinic radiation, but the exact impact on the overall performance of the reticle is not explicitly discussed in the abstract.

=== Are there any limitations to the balancing of optimal doses within about 5% of each other? ===
While the abstract mentions the balancing of optimal doses, it does not address any potential limitations or challenges that may arise in achieving this level of precision.


==Original Abstract Submitted==

some embodiments include a reticle which includes first pattern features and second pattern features. a first optimal dose of actinic radiation is associated with the first pattern features and a second optimal dose of the actinic radiation is associated with the second pattern features. the second pattern features are larger than the first pattern features. each of the second pattern features has a configuration which includes a central region laterally surrounded by an outer region, with the central region being of different opacity than the outer region. the configurations of the second pattern features balance the second optimal dose of the actinic radiation to be within about 5% of the first optimal dose of the actinic radiation. some embodiments include photo-processing methods.



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