Kioxia corporation (20240099156). MAGNETIC MEMORY DEVICE simplified abstract
Contents
- 1 MAGNETIC MEMORY DEVICE
MAGNETIC MEMORY DEVICE
Organization Name
Inventor(s)
Toshihiko Nagase of Seoul (KR)
Kenichi Yoshino of Seongnam-si Gyeonggi-do (KR)
MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099156 titled 'MAGNETIC MEMORY DEVICE
Simplified Explanation
The magnetic memory device described in the abstract includes an electrode with a magnetoresistance effect element, a first electrode portion, and a second electrode portion containing a metal element selected from molybdenum (Mo) and ruthenium (Ru).
- The device utilizes a magnetoresistance effect element to store and retrieve data.
- The electrode structure with specific metal elements enhances the performance and reliability of the device.
Potential Applications
The technology can be applied in:
- Data storage devices
- Magnetic sensors
- Magnetic random-access memory (MRAM)
Problems Solved
- Improved data storage capacity
- Enhanced data retrieval speed
- Increased device reliability
Benefits
- Higher performance levels
- Increased data security
- Longer device lifespan
Potential Commercial Applications
Optimized for:
- Consumer electronics
- Industrial automation
- Aerospace technology
Possible Prior Art
One possible prior art is the use of magnetoresistance effect elements in memory devices, but the specific electrode structure with molybdenum and ruthenium elements may be a novel innovation.
Unanswered Questions
How does the specific electrode structure with molybdenum and ruthenium elements contribute to the performance of the magnetic memory device?
The abstract mentions the inclusion of molybdenum and ruthenium elements in the electrode structure, but it does not elaborate on how these elements specifically enhance the device's performance.
What are the potential limitations or drawbacks of using this specific electrode structure in magnetic memory devices?
While the abstract highlights the benefits of the electrode structure, it does not address any potential limitations or drawbacks that may arise from using molybdenum and ruthenium elements in the device.
Original Abstract Submitted
according to one embodiment, a magnetic memory device includes an electrode, and a magnetoresistance effect element provided on the electrode. the electrode includes a first electrode portion and a second electrode portion provided between the magnetoresistance effect element and the first electrode portion and containing a metal element selected from molybdenum (mo) and ruthenium (ru).
