International business machines corporation (20240130244). CHAMFERED MRAM DEVICE STRUCTURE simplified abstract

CHAMFERED MRAM DEVICE STRUCTURE

Organization Name

international business machines corporation

Inventor(s)

Oscar Van Der Straten of Guilderland Center NY (US)

Chih-Chao Yang of Glenmont NY (US)

CHAMFERED MRAM DEVICE STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240130244 titled 'CHAMFERED MRAM DEVICE STRUCTURE

Simplified Explanation

The present invention provides a method of forming a MRAM structure, which includes the following steps:

• Forming a blanket first ferromagnetic layer on top of a bottom electrode.
• Etching the blanket first ferromagnetic layer to form a first ferromagnetic layer with an angled upper portion and a vertical lower portion.
• Forming a blanket tunnel barrier layer on top of the first ferromagnetic layer and a blanket second ferromagnetic layer on top of the tunnel barrier layer.
• Patterning the tunnel barrier layer and the second ferromagnetic layer to form a tunnel barrier layer and a second ferromagnetic layer.
• Forming a top electrode on top of the second ferromagnetic layer.

• • Potential Applications:**

- Non-volatile memory devices - Magnetic sensors - Spintronic devices

• • Problems Solved:**

- Improved data retention in memory devices - Enhanced performance of magnetic sensors - Increased efficiency in spintronic devices

• • Benefits:**

- Higher data storage capacity - Faster data access speeds - Lower power consumption

• • Potential Commercial Applications of this Technology:**

- Data storage industry - Electronics manufacturing sector - Semiconductor industry

• • Possible Prior Art:**

- Previous methods of forming MRAM structures using different materials and processes - Research on improving the performance of magnetic tunnel junctions

• • Unanswered Questions:**

• • 1. How does the method of forming a MRAM structure compare to existing techniques in terms of efficiency and cost-effectiveness?**

The article does not provide a direct comparison with existing techniques in terms of efficiency and cost-effectiveness. Further research or comparative studies may be needed to address this question.

• • 2. Are there any limitations or challenges associated with the proposed method of forming a MRAM structure that need to be addressed for practical implementation?**

The article does not mention any limitations or challenges associated with the proposed method. Additional studies or experiments may be required to identify and overcome any potential obstacles in practical implementation.

Original Abstract Submitted

embodiments of present invention provide a method of forming a mram structure. the method includes forming a blanket first ferromagnetic layer on top of a bottom electrode; etching the blanket first ferromagnetic layer to form a first ferromagnetic layer, the first ferromagnetic layer having an upper portion that has an angled edge and a lower portion that has a vertical edge; forming a blanket tunnel barrier layer on top of the first ferromagnetic layer and a blanket second ferromagnetic layer on top of the blanket tunnel barrier layer; patterning the blanket tunnel barrier layer and the blanket second ferromagnetic layer to form a tunnel barrier layer and a second ferromagnetic layer; and forming a top electrode on top of the second ferromagnetic layer. a mram structure formed thereby is also provided.