International business machines corporation (20240130242). TOP CONTACT STRUCTURE FOR EMBEDDED MRAM simplified abstract

TOP CONTACT STRUCTURE FOR EMBEDDED MRAM

Organization Name

international business machines corporation

Inventor(s)

Ailian Zhao of Slingerlands NY (US)

Wu-Chang Tsai of Albany NY (US)

Ashim Dutta of Clifton Park NY (US)

Chih-Chao Yang of Glenmont NY (US)

TOP CONTACT STRUCTURE FOR EMBEDDED MRAM - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240130242 titled 'TOP CONTACT STRUCTURE FOR EMBEDDED MRAM

Simplified Explanation

The abstract describes a method for forming an MRAM structure, including the steps of forming a magnetic tunnel junction (MTJ) stack, surrounding it with a conformal liner and a dielectric layer, selectively forming a metal oxide layer with an opening exposing the MTJ stack, and creating a top contact through the opening.

• Formation of MRAM structure:

 - Form at least one magnetic tunnel junction (MTJ) stack on a supporting structure.
 - Surround the MTJ stack with a conformal liner.
 - Add a first dielectric layer around the conformal liner.
 - Selectively form a metal oxide layer with an opening on top of the conformal liner and the dielectric layer.
 - Create a top contact that contacts the top surface of the MTJ stack through the opening in the metal oxide layer.

Potential Applications

The technology can be applied in: - Non-volatile memory devices - Magnetic sensors - Spintronics

Problems Solved

- Improved performance and reliability of MRAM structures - Enhanced data storage capabilities - Increased efficiency in memory devices

Benefits

- Higher data retention - Faster read and write speeds - Lower power consumption

Potential Commercial Applications

"MRAM Structure Formation Method for Enhanced Memory Devices"

Possible Prior Art

There may be prior art related to the formation of MRAM structures using similar techniques, but specific examples are not provided in the abstract.

Unanswered Questions

How does the conformal liner impact the performance of the MRAM structure?

The abstract mentions the use of a conformal liner, but it does not elaborate on its specific role or benefits in the formation of the MRAM structure.

What are the specific materials used in the metal oxide layer and how do they affect the functionality of the MRAM structure?

The abstract mentions the formation of a metal oxide layer, but it does not specify the exact materials used or their impact on the performance of the MRAM structure.

Original Abstract Submitted

embodiments of present invention provide a method of forming a mram structure. the method includes forming at least one magnetic tunnel junction (mtj) stack on top of a supporting structure; forming a conformal liner surrounding a sidewall of the mtj stack; forming a first dielectric layer surrounding the conformal liner; selectively forming a metal oxide layer on top of the conformal liner and the first dielectric layer, the metal oxide layer having at least a first opening that exposes a top surface of the mtj stack; and forming a top contact contacting the top surface of the mtj stack through the first opening in the metal oxide layer. an mram structure formed thereby is also provided.