International business machines corporation (20240130142). RESISTIVE RANDOM-ACCESS MEMORY STRUCTURES WITH STACKED TRANSISTORS simplified abstract

RESISTIVE RANDOM-ACCESS MEMORY STRUCTURES WITH STACKED TRANSISTORS

Organization Name

international business machines corporation

Inventor(s)

Min Gyu Sung of Latham NY (US)

Kangguo Cheng of Schenectady NY (US)

Julien Frougier of Albany NY (US)

Ruilong Xie of Niskayuna NY (US)

Chanro Park of Clifton Park NY (US)

Soon-Cheon Seo of Glenmont NY (US)

RESISTIVE RANDOM-ACCESS MEMORY STRUCTURES WITH STACKED TRANSISTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240130142 titled 'RESISTIVE RANDOM-ACCESS MEMORY STRUCTURES WITH STACKED TRANSISTORS

Simplified Explanation

The semiconductor structure described in the abstract consists of a first transistor, a second transistor stacked vertically over the first transistor, a shared source/drain region between the two transistors, and a resistive random-access memory device connected to the shared source/drain region.

• The first transistor
• The second transistor stacked vertically over the first transistor
• A shared source/drain region between the first and second transistors
• A resistive random-access memory device connected to the shared source/drain region

Potential Applications

This technology could be applied in:

• Advanced computing systems
• Memory storage devices
• Integrated circuits

Problems Solved

This technology helps in:

• Increasing efficiency in data processing
• Reducing the footprint of semiconductor devices

Benefits

The benefits of this technology include:

• Enhanced performance of electronic devices
• Improved data storage capabilities
• Increased speed and reliability in data processing

Potential Commercial Applications

"Semiconductor Structure with Shared Source/Drain Region and Resistive Random-Access Memory Device" could be used in:

• Consumer electronics
• Data centers
• Telecommunications industry

Possible Prior Art

One possible prior art for this technology could be the development of 3D integrated circuits that stack multiple layers of transistors for increased performance and efficiency.

Unanswered Questions

How does this technology impact power consumption in electronic devices?

This article does not address the specific impact of this technology on power consumption in electronic devices.

What are the potential challenges in manufacturing semiconductor structures with shared source/drain regions?

The article does not discuss the potential challenges that may arise in the manufacturing process of semiconductor structures with shared source/drain regions.

Original Abstract Submitted

a semiconductor structure comprises a first transistor, a second transistor vertically stacked over the first transistor, a source/drain region shared between the first transistor and the second transistor, and a resistive random-access memory device connected to the shared source/drain region.