International business machines corporation (20240128318). SEMICONDUCTOR STRUCTURE WITH FULLY WRAPPED-AROUND BACKSIDE CONTACT simplified abstract

SEMICONDUCTOR STRUCTURE WITH FULLY WRAPPED-AROUND BACKSIDE CONTACT

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Chanro Park of Clifton Park NY (US)

Min Gyu Sung of Latham NY (US)

Kangguo Cheng of Schenectady NY (US)

Julien Frougier of Albany NY (US)

SEMICONDUCTOR STRUCTURE WITH FULLY WRAPPED-AROUND BACKSIDE CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240128318 titled 'SEMICONDUCTOR STRUCTURE WITH FULLY WRAPPED-AROUND BACKSIDE CONTACT

Simplified Explanation

The semiconductor structure described in the patent application includes a backside contact and a source/drain region fully disposed within the backside contact.

• The innovation involves integrating the source/drain region entirely within the backside contact of the semiconductor structure.
• This design allows for improved electrical connectivity and efficiency within the semiconductor device.
• By placing the source/drain region within the backside contact, the overall footprint of the semiconductor structure can be reduced.
• The innovation may lead to enhanced performance and reliability of the semiconductor device.

Potential Applications

The technology could be applied in:

• Integrated circuits
• Microprocessors
• Memory devices

Problems Solved

• Improved electrical connectivity
• Enhanced efficiency
• Reduced footprint of semiconductor structures

Benefits

• Increased performance and reliability
• Enhanced electrical connectivity
• Space-saving design

Potential Commercial Applications

Optimizing Semiconductor Structures for Improved Performance

Possible Prior Art

There may be prior art related to integrating source/drain regions within backside contacts in semiconductor structures, but specific examples are not provided in this context.

Unanswered Questions

How does this innovation impact the overall cost of manufacturing semiconductor devices?

The article does not address the potential cost implications of implementing this technology.

What are the specific technical challenges that may arise when integrating the source/drain region within the backside contact?

The article does not delve into the technical hurdles that may need to be overcome during the implementation of this innovation.

Original Abstract Submitted

a semiconductor structure includes a backside contact, and a source/drain region fully disposed within the backside contact.