International business machines corporation (20240122076). CoFeB Based Magnetic Tunnel Junction Device with Boron Encapsulation Layer simplified abstract

CoFeB Based Magnetic Tunnel Junction Device with Boron Encapsulation Layer

Organization Name

international business machines corporation

Inventor(s)

Alexander Reznicek of Troy NY (US)

Young-Suk Choi of Niskayuna NY (US)

Matthias Georg Gottwald of Ridgefield CT (US)

Daniel P. Morris of Purchase NY (US)

CoFeB Based Magnetic Tunnel Junction Device with Boron Encapsulation Layer - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240122076 titled 'CoFeB Based Magnetic Tunnel Junction Device with Boron Encapsulation Layer

Simplified Explanation

The patent application describes a method of encapsulating magnetic tunneling junction (MTJ) pillars with a boron-containing encapsulation layer to control the diffusion of boron out of the magnetic free layers.

• MTJ pillars are placed on a substrate and consist of magnetic reference layers and magnetic free layers.
• The magnetic free layers are made of a material containing boron, and they have external surfaces.
• A boron-containing encapsulation layer is in direct contact with the external surfaces of the magnetic free layers.
• The boron-containing encapsulation layer has a higher atomic percentage of boron than the magnetic free layers.
• The encapsulation layer is very thin, between 1 and 3 nanometers, and contains at least 95% pure boron.
• This encapsulation layer limits the diffusion of boron out of the magnetic free layers, controlling its properties.

Potential Applications

The technology could be applied in magnetic storage devices, magnetic sensors, and other electronic devices requiring precise control over magnetic properties.

Problems Solved

This technology solves the problem of boron diffusion in magnetic free layers, which can affect the performance and stability of magnetic devices.

Benefits

The boron-containing encapsulation layer ensures the stability and reliability of the magnetic properties of the MTJ pillars, leading to improved performance and longevity of electronic devices.

Potential Commercial Applications

The technology could be utilized in the manufacturing of advanced magnetic storage devices, sensors, and other electronic components, enhancing their performance and durability.

Possible Prior Art

Prior art may include methods of encapsulating magnetic layers in electronic devices to control material properties and prevent diffusion of elements, but specific examples of boron-containing encapsulation layers may be limited.

How does the thickness of the boron-containing encapsulation layer affect the diffusion of boron in the magnetic free layers?

The thickness of the encapsulation layer plays a crucial role in controlling the diffusion of boron out of the magnetic free layers. A thinner layer may allow for more diffusion, while a thicker layer may restrict it. Further research could explore the optimal thickness for different applications.

What are the potential challenges in scaling up this technology for mass production in electronic devices?

Scaling up the production of MTJ pillars with boron-containing encapsulation layers may pose challenges in terms of cost, efficiency, and compatibility with existing manufacturing processes. Addressing these challenges could be crucial for the widespread adoption of this technology in commercial applications.

Original Abstract Submitted

one or more magnetic tunneling junction (mtj) pillars are disposed on a substrate. the pillars have one or more magnetic reference layers and one or more magnetic free layers. the magnetic free layers have one or more external surfaces and are made of a magnetic free layer material containing atomic percentage amount of boron. a boron-containing encapsulation layer encapsulates the mtj pillar(s) and is in direct contact with the magnetic free layer external surfaces. the boron-containing encapsulation layer contains an atomic percentage amount of boron greater than the magnetic free layer atomic percentage amount of boron. embodiments of the boron-containing encapsulation layer contain at least 95 percent pure boron and are between 1 and 3 nanometers thick. accordingly, the boron-containing encapsulation layer controls and limits the amount of boron diffusing out of the magnetic free layer across a boron diffusion interface formed between the magnetic free layer external surfaces and the boron-containing encapsulation layer. alternative embodiments of boron-containing encapsulation layers and methods of making mtj devices are disclosed.