International business machines corporation (20240114807). HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL simplified abstract

HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL

Organization Name

international business machines corporation

Inventor(s)

Victor W.C. Chan of Guilderland NY (US)

JIN PING Han of Yorktown Heights NY (US)

Samuel Sung Shik Choi of Ballston Lake NY (US)

Injo Ok of Loudonville NY (US)

HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240114807 titled 'HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL

Simplified Explanation

The abstract describes an integrated circuit with a field effect transistor (FET) and a phase change memory (PCM) cell, where the PCM cell includes a heater positioned such that its bottom surface is at or below the top surface of the FET.

• The integrated circuit includes a field effect transistor (FET) and a phase change memory (PCM) cell.
• The PCM cell has a heater with its bottom surface at or below the top surface of the FET.

Potential Applications

This technology could be applied in:

• Memory storage devices
• Computing systems
• Consumer electronics

Problems Solved

This technology helps in:

• Improving memory storage efficiency
• Enhancing computing performance
• Reducing power consumption

Benefits

The benefits of this technology include:

• Faster data access and retrieval
• Higher data storage density
• Lower energy consumption

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Semiconductor industry
• Memory chip manufacturing
• Electronics hardware development

Possible Prior Art

One possible prior art could be the integration of FETs and PCM cells in memory devices for improved performance and efficiency.

Unanswered Questions

How does the positioning of the heater in relation to the FET improve the overall performance of the integrated circuit?

The abstract mentions that the bottom surface of the heater is at or below the top surface of the FET, but it does not explain how this specific positioning enhances the functionality of the integrated circuit.

Are there any specific design considerations or limitations associated with integrating FETs and PCM cells in this manner?

While the abstract describes the integration of FETs and PCM cells, it does not delve into any potential challenges or constraints that may arise during the design and implementation process.

Original Abstract Submitted

an integrated circuit includes a field effect transistor (fet) and a phase change memory (pcm) cell. the pcm cell includes a heater, wherein a bottom surface of the heater is at or below a top surface of the fet.