International business machines corporation (20240113219). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS simplified abstract

VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS

Organization Name

international business machines corporation

Inventor(s)

Brent A. Anderson of Jericho VT (US)

Albert M. Chu of Nashua NH (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Ruilong Xie of Niskayuna NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

REINALDO Vega of Mahopac NY (US)

VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113219 titled 'VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS

Simplified Explanation

The abstract describes a patent application for a VTFET (Vertical Tunneling Field Effect Transistor) on a wafer with a backside power delivery network. The VTFET has backside contacts connected to different regions of the device and the power delivery network.

• A VTFET is a Vertical Tunneling Field Effect Transistor.
• The VTFET is located on a wafer.
• The wafer has a backside power delivery network.
• A first backside contact is connected to the bottom source/drain region of the VTFET and a portion of the power delivery network.
• A second backside contact is connected to the top source/drain region of the VTFET and another portion of the power delivery network.

Potential Applications

The technology described in this patent application could be applied in:

• Power electronics
• Semiconductor devices
• Integrated circuits

Problems Solved

This technology helps in:

• Efficient power delivery
• Improved performance of VTFETs
• Enhanced integration of power delivery networks

Benefits

The benefits of this technology include:

• Higher efficiency in power delivery
• Better performance of VTFETs
• Increased integration capabilities

Potential Commercial Applications

This technology could find applications in:

• Electronics manufacturing
• Semiconductor industry
• Power management systems

Possible Prior Art

One possible prior art for this technology could be:

• Existing VTFET designs with different power delivery configurations

Unanswered Questions

How does this technology compare to traditional power delivery methods in VTFETs?

This article does not provide a direct comparison between the new technology and traditional power delivery methods in VTFETs.

What are the specific performance improvements achieved with this new power delivery network design?

The article does not detail the specific performance enhancements resulting from the new power delivery network design.

Original Abstract Submitted

a vtfet is provided on a wafer. a backside power delivery network is on a backside of the wafer. a first backside contact is connected to a bottom source/drain region of the vtfet and a first portion of the backside power delivery network. a second backside contact is connected to top source/drain region of the vtfet and a second portion of the backside power delivery network.