International business machines corporation (20240113176). FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract

FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Brent A. Anderson of Jericho VT (US)

Kisik Choi of Watervliet NY (US)

Su Chen Fan of Cohoes NY (US)

Shogo Mochizuki of Mechanicville NY (US)

SON Nguyen of Schenectady NY (US)

FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113176 titled 'FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN

Simplified Explanation

The semiconductor device described in the abstract includes a field effect transistor (FET) with a unique structure involving frontside and backside source/drain contacts.

• The FET includes a gate, a first source/drain (S/D) region with a frontside S/D contact extending vertically upward, and a second S/D region with a conduit liner and an inner column below the wraparound gate.
• The backside S/D contact extends vertically downward from the bottom surface of the second S/D region.

Potential Applications

This semiconductor device with improved source/drain contact structures could be used in various electronic devices requiring high-performance transistors, such as smartphones, computers, and other consumer electronics.

Problems Solved

1. Traditional source/drain contact structures may limit the performance of FETs due to resistance and other factors. This innovation addresses these limitations by providing enhanced contact structures. 2. The backside S/D contact allows for better electrical connections and improved overall performance of the FET.

Benefits

1. Improved performance and efficiency of the FET due to optimized source/drain contact structures. 2. Enhanced reliability and longevity of electronic devices utilizing this semiconductor technology.

Potential Commercial Applications

Optimizing Source/Drain Contacts for Enhanced FET Performance

Possible Prior Art

Prior art may include existing semiconductor devices with different source/drain contact structures, but none may specifically address the unique frontside and backside contacts described in this patent application.

Unanswered Questions

How does the new source/drain contact structure impact the overall efficiency of the FET?

The article does not provide specific data on the efficiency improvements resulting from the new source/drain contact structure.

Are there any potential challenges in implementing this technology on a large scale in commercial electronic devices?

The article does not address any potential challenges or limitations in scaling up the production and integration of this technology in commercial applications.

Original Abstract Submitted

a semiconductor device includes a field effect transistor (fet). the fet includes a gate and a first source or drain (s/d) region. a frontside s/d contact may be connected to and extend vertically upward from a top surface of the first s/d region. the fet further includes a second s/d region. the second s/d region includes a conduit liner and an inner column internal to the conduit liner that extends below a bottom surface of the wraparound gate. a backside s/d contact may be connected to and extend vertically downward from a bottom surface of the second s/d region.