International business machines corporation (20240113018). LOCALLY WIDENED PROFILE FOR NANOSCALE WIRING STRUCTURE simplified abstract

LOCALLY WIDENED PROFILE FOR NANOSCALE WIRING STRUCTURE

Organization Name

international business machines corporation

Inventor(s)

Oscar Van Der Straten of Guilderland Center NY (US)

Koichi Motoyama of Clifton Park NY (US)

Scott A. Devries of Albany NY (US)

Chih-Chao Yang of Glenmont NY (US)

LOCALLY WIDENED PROFILE FOR NANOSCALE WIRING STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113018 titled 'LOCALLY WIDENED PROFILE FOR NANOSCALE WIRING STRUCTURE

Simplified Explanation

The patent application describes a wire interconnect structure with locally widened profiles, including portions of varying widths stacked on top of each other.

• The wire interconnect includes a first portion with a certain width.
• It also includes a second portion with a greater width than the first portion, stacked above the first portion.
• Additionally, there is a third portion with a width less than the second portion, stacked above the second portion.

Potential Applications

The technology described in this patent application could be applied in the following areas:

• Semiconductor manufacturing
• Electronics industry
• Communication systems

Problems Solved

This technology addresses the following issues:

• Improving signal transmission efficiency
• Enhancing electrical conductivity
• Reducing signal interference

Benefits

The wire interconnect structure with locally widened profiles offers the following benefits:

• Increased performance of electronic devices
• Enhanced reliability of interconnects
• Improved overall functionality of circuits

Potential Commercial Applications

The wire interconnect structure with locally widened profiles could find applications in various commercial sectors, such as:

• Consumer electronics
• Telecommunications
• Automotive industry

Possible Prior Art

One possible prior art related to this technology is the use of multi-layered interconnect structures in semiconductor devices to improve signal transmission and reduce signal loss.

How does this technology compare to traditional wire interconnect structures in terms of performance and efficiency?

The article does not provide a direct comparison between the new wire interconnect structure and traditional ones. Further research or testing may be needed to determine the exact performance differences.

What are the potential challenges or limitations of implementing this wire interconnect structure in practical applications?

The article does not address any challenges or limitations that may arise when implementing this technology. Additional studies or experiments may be required to identify and overcome any potential obstacles.

Original Abstract Submitted

a wire interconnect, a wire interconnect structure, and a method to form wire interconnect structures with locally widened profiles. the wire interconnect may include a first portion of the wire interconnect with a first width. the wire interconnect may also include a second portion of the wire interconnect with a second width, where the second width is greater than the first width, and where the second portion of the wire interconnect is above the first portion of the wire interconnect. the wire interconnect may also include a third portion of the wire interconnect with a third width, where the third width is less than the second width, and where the third portion of the wire interconnect is above the second portion of the wire interconnect.