International business machines corporation (20240105608). LOCAL FRONTSIDE POWER RAIL WITH GLOBAL BACKSIDE POWER DELIVERY simplified abstract

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LOCAL FRONTSIDE POWER RAIL WITH GLOBAL BACKSIDE POWER DELIVERY

Organization Name

international business machines corporation

Inventor(s)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Albert M. Chu of Nashua NH (US)

Brent A. Anderson of Jericho VT (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Ruilong Xie of Niskayuna NY (US)

Reinaldo Vega of Mahopac NY (US)

LOCAL FRONTSIDE POWER RAIL WITH GLOBAL BACKSIDE POWER DELIVERY - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105608 titled 'LOCAL FRONTSIDE POWER RAIL WITH GLOBAL BACKSIDE POWER DELIVERY

Simplified Explanation

The abstract describes a method for forming a semiconductor device with power delivery capabilities through a through silicon via (TSV) connecting power rails on the front and back sides of the device.

  • The method involves forming a front side of the semiconductor device with a metal wire M2 and power rails, and a back side with a metal wire M1.
  • A TSV is formed from the back side to the front side, connecting the power rails on both sides.
  • A power delivery network is formed on the back side, with the TSV providing power from this network to the front side.

Potential Applications

This technology could be applied in the manufacturing of advanced semiconductor devices with efficient power delivery systems.

Problems Solved

This method solves the problem of efficiently delivering power within a semiconductor device by utilizing TSVs to connect power rails on different sides of the device.

Benefits

The use of TSVs for power delivery allows for more compact and efficient semiconductor devices with improved power distribution capabilities.

Potential Commercial Applications

This technology could be valuable in the development of high-performance computing devices, mobile devices, and other electronics requiring efficient power delivery systems.

Possible Prior Art

One possible prior art could be the use of TSVs in semiconductor packaging to improve electrical connections and signal transmission within devices.

What are the specific materials used in the formation of the TSV in this method?

The specific materials used in the formation of the TSV in this method are not mentioned in the abstract. Further details on the materials and processes involved in creating the TSV could provide a more comprehensive understanding of the technology.

How does the power delivery network on the back side of the semiconductor device interact with the TSV to provide power to the front side?

The abstract mentions that the TSV provides power from the power delivery network on the back side to the front side of the semiconductor device. Exploring the specific mechanisms and connections between the power delivery network and the TSV could shed light on the efficiency and reliability of the power delivery system in this technology.


Original Abstract Submitted

a method for forming a semiconductor device includes forming a front side of the semiconductor device, the front side comprising a metal wire m2, and a plurality of power rails coupled to the m2. further, the method includes forming a through silicon via (tsv) from a back side of the semiconductor device to the front side, the tsv connecting a first power rail of the front side with a metal wire m1 on the back side. further, the method includes forming a power delivery network on the back side, the tsv providing power from the power delivery network to the front side.