Intel corporation (20240136326). NO MOLD SHELF PACKAGE DESIGN AND PROCESS FLOW FOR ADVANCED PACKAGE ARCHITECTURES simplified abstract

NO MOLD SHELF PACKAGE DESIGN AND PROCESS FLOW FOR ADVANCED PACKAGE ARCHITECTURES

Organization Name

intel corporation

Inventor(s)

Wei Li of Chandler AZ (US)

Edvin Cetegen of Chandler AZ (US)

Nicholas S. Haehn of Scottsdale AZ (US)

Ram S. Viswanath of Phoenix AZ (US)

Nicholas Neal of Gilbert AZ (US)

Mitul Modi of Phoenix AZ (US)

NO MOLD SHELF PACKAGE DESIGN AND PROCESS FLOW FOR ADVANCED PACKAGE ARCHITECTURES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240136326 titled 'NO MOLD SHELF PACKAGE DESIGN AND PROCESS FLOW FOR ADVANCED PACKAGE ARCHITECTURES

Simplified Explanation

The semiconductor package described in the patent application includes a substrate with multiple dies and an encapsulation layer, as well as dummy silicon regions positioned on the substrate edges. These dummy silicon regions have a top surface coplanar to the dies and are made of materials with high thermal conductivity. An underfill layer surrounds the substrate and dies, with the encapsulation layer covering parts of the underfill layer.

• Substrate with multiple dies and encapsulation layer:

 - The semiconductor package consists of a substrate with multiple dies placed on it, covered by an encapsulation layer.

• Dummy silicon regions with high thermal conductivity:

 - Dummy silicon regions made of materials with high thermal conductivity, such as silicon, metals, or highly thermal conductive materials, are positioned on the edges of the substrate.

• Underfill layer and encapsulation layer:

 - An underfill layer surrounds the substrate and dies, while the encapsulation layer covers parts of the underfill layer.

Potential Applications

The technology described in this patent application could be applied in various electronic devices and systems that require efficient thermal management, such as smartphones, tablets, laptops, and automotive electronics.

Problems Solved

This technology helps in improving thermal dissipation in semiconductor packages, reducing the risk of overheating and enhancing the overall performance and reliability of electronic devices.

Benefits

- Enhanced thermal management in semiconductor packages - Improved performance and reliability of electronic devices - Reduced risk of overheating and potential damage to components

Potential Commercial Applications

"High Thermal Conductivity Semiconductor Packages for Improved Performance and Reliability"

Possible Prior Art

There are existing semiconductor packaging technologies that focus on thermal management, such as the use of heat sinks, thermal pads, and other materials with high thermal conductivity to dissipate heat effectively. However, the specific approach of incorporating dummy silicon regions with high thermal conductivity on the substrate edges as described in this patent application may be a novel innovation.

How does this technology compare to existing thermal management solutions in semiconductor packaging?

The article does not provide a direct comparison between this technology and other existing thermal management solutions in semiconductor packaging. It would be beneficial to understand the specific advantages and limitations of this approach compared to traditional methods.

What are the potential challenges or limitations of implementing this technology in mass production of semiconductor packages?

The article does not address the potential challenges or limitations that may arise during the mass production of semiconductor packages using this technology. It would be important to consider factors such as cost, scalability, and compatibility with existing manufacturing processes.

Original Abstract Submitted

embodiments include semiconductor packages and a method to form such semiconductor packages. a semiconductor package includes a plurality of dies on a substrate, and an encapsulation layer over the substrate. the encapsulation layer surrounds the dies. the semiconductor package also includes a plurality of dummy silicon regions on the substrate. the dummy silicon regions surround the dies and encapsulation layer. the plurality of dummy silicon regions are positioned on two or more edges of the substrate. the dummy silicon regions have a top surface substantially coplanar to a top surface of the dies. the dummy silicon regions include materials that include silicon, metals, or highly-thermal conductive materials. the materials have a thermal conductivity of approximately 120 w/mk or greater, or is equal to or greater than the thermal conductivity of silicon. an underfill layer surrounds the substrate and the dies, where the encapsulation layer surrounds portions of the underfill layer.