Intel corporation (20240136277). TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION simplified abstract

TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION

Organization Name

intel corporation

Inventor(s)

Gilbert Dewey of Hillsboro OR (US)

Ryan Keech of Portland OR (US)

Cory Bomberger of Portland OR (US)

Cheng-Ying Huang of Hillsboro OR (US)

Ashish Agrawal of Hillsboro OR (US)

Willy Rachmady of Beaverton OR (US)

Anand Murthy of Portland OR (US)

TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240136277 titled 'TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION

Simplified Explanation

The patent application describes a device with a transistor made of group III-V or group IV semiconductor material, with separate source and drain structures, and a gate structure in the body of the transistor.

• The device includes a transistor with a body made of group III-V or group IV semiconductor material.
• The transistor has separate source and drain structures on different portions of the body.
• A gate structure is present in the body of the transistor, with a first gate structure portion in a recess and a second gate structure portion between the source and drain structures.
• The source contact is connected to the source structure, and the drain contact is connected to the drain structure, with the source contact in contact with the metallization structure in the device level.

Potential Applications

This technology could be applied in:

• High-performance electronic devices
• Advanced semiconductor devices

Problems Solved

This technology helps in:

• Improving transistor performance
• Enhancing device reliability

Benefits

The benefits of this technology include:

• Increased efficiency in electronic devices
• Better overall device performance

Potential Commercial Applications

This technology could be commercially applied in:

• Consumer electronics
• Telecommunications industry

Possible Prior Art

There may be prior art related to:

• Transistor structures with separate source and drain regions
• Semiconductor devices with gate structures in the body

Unanswered Questions

How does this technology impact power consumption in electronic devices?

This article does not specifically address the impact of this technology on power consumption in electronic devices.

What are the potential challenges in scaling up this technology for mass production?

The article does not discuss the potential challenges in scaling up this technology for mass production.

Original Abstract Submitted

a device includes a device level having a metallization structure coupled to a semiconductor device and a transistor above the device level. the transistor has a body including a single crystal group iii-v or group iv semiconductor material, a source structure on a first portion of the body and a drain structure on a second portion of the body, where the source structure is separate from the drain structure. the transistor further includes a gate structure including a first gate structure portion in a recess in the body and a second gate structure portion between the source structure and the drain structure. a source contact is coupled with the source structure and a drain contact is coupled with the drain structure. the source contact is in contact with the metallization structure in the device level.