Intel corporation (20240128023). DECOUPLING CAPACITORS BASED ON DUMMY THROUGH-SILICON-VIAS simplified abstract

DECOUPLING CAPACITORS BASED ON DUMMY THROUGH-SILICON-VIAS

Organization Name

intel corporation

Inventor(s)

Changyok Park of Portland OR (US)

DECOUPLING CAPACITORS BASED ON DUMMY THROUGH-SILICON-VIAS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240128023 titled 'DECOUPLING CAPACITORS BASED ON DUMMY THROUGH-SILICON-VIAS

Simplified Explanation

The abstract describes IC structures with decoupling capacitors based on dummy TSVs provided in a support structure. The decoupling capacitor includes first and second capacitor electrodes with a capacitor insulator between them. The first electrode is a liner of electrically conductive material in an opening in the support structure, while the insulator is a liner of dielectric material in the same opening. The second electrode is a second conductive material filling at least a portion of the opening.

• IC structures with decoupling capacitors based on dummy TSVs
• Decoupling capacitor includes first and second capacitor electrodes with a capacitor insulator
• First electrode is a liner of electrically conductive material in an opening in the support structure
• Insulator is a liner of dielectric material in the same opening
• Second electrode is a second conductive material filling at least a portion of the opening

Potential Applications

The technology described in this patent application could be applied in the following areas:

• Integrated circuits
• Semiconductor devices
• Electronic components

Problems Solved

This technology addresses the following issues:

• Improved decoupling of capacitors in IC structures
• Enhanced performance and reliability of electronic devices
• Efficient use of space in semiconductor designs

Benefits

The benefits of this technology include:

• Better signal integrity in integrated circuits
• Reduced noise and interference in electronic systems
• Higher efficiency and functionality of semiconductor devices

Potential Commercial Applications

The technology could find commercial applications in:

• Consumer electronics
• Telecommunications equipment
• Automotive electronics

Possible Prior Art

One possible prior art in this field is the use of traditional decoupling capacitors in IC structures to address noise and interference issues.

How does this technology compare to existing decoupling capacitor designs in terms of performance and efficiency?

The article does not provide a direct comparison with existing decoupling capacitor designs, so it is unclear how this technology stacks up against current solutions.

What are the potential challenges or limitations of implementing this technology in practical semiconductor devices?

The article does not address any potential challenges or limitations that may arise when implementing this technology in real-world semiconductor devices.

Original Abstract Submitted

disclosed herein are ic structures with one or more decoupling capacitors based on dummy tsvs provided in a support structure. an example decoupling capacitor includes first and second capacitor electrodes and a capacitor insulator between them. the first capacitor electrode is a liner of a first electrically conductive material on sidewalls and a bottom of an opening in the support structure, the opening in the support structure extending from the first side towards, but not reaching, the second side. the capacitor insulator is a liner of a dielectric material on sidewalls and a bottom of the opening in the support structure lined with the first electrically conductive material. the second capacitor electrode is a second electrically conductive material filling at least a portion of the opening in the support structure lined with the first electrically conductive material and with the dielectric material.