Intel corporation (20240136277). TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION simplified abstract
Contents
- 1 TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION
Organization Name
Inventor(s)
Gilbert Dewey of Hillsboro OR (US)
Ryan Keech of Portland OR (US)
Cory Bomberger of Portland OR (US)
Cheng-Ying Huang of Hillsboro OR (US)
Ashish Agrawal of Hillsboro OR (US)
Willy Rachmady of Beaverton OR (US)
Anand Murthy of Portland OR (US)
TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136277 titled 'TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION
Simplified Explanation
The patent application describes a device with a transistor made of group III-V or group IV semiconductor material, with separate source and drain structures, and a gate structure in the body of the transistor.
- The device includes a transistor with a body made of group III-V or group IV semiconductor material.
- The transistor has separate source and drain structures on different portions of the body.
- A gate structure is present in the body of the transistor, with a first gate structure portion in a recess and a second gate structure portion between the source and drain structures.
- The source contact is connected to the source structure, and the drain contact is connected to the drain structure, with the source contact in contact with the metallization structure in the device level.
Potential Applications
This technology could be applied in:
- High-performance electronic devices
- Advanced semiconductor devices
Problems Solved
This technology helps in:
- Improving transistor performance
- Enhancing device reliability
Benefits
The benefits of this technology include:
- Increased efficiency in electronic devices
- Better overall device performance
Potential Commercial Applications
This technology could be commercially applied in:
- Consumer electronics
- Telecommunications industry
Possible Prior Art
There may be prior art related to:
- Transistor structures with separate source and drain regions
- Semiconductor devices with gate structures in the body
Unanswered Questions
How does this technology impact power consumption in electronic devices?
This article does not specifically address the impact of this technology on power consumption in electronic devices.
What are the potential challenges in scaling up this technology for mass production?
The article does not discuss the potential challenges in scaling up this technology for mass production.
Original Abstract Submitted
a device includes a device level having a metallization structure coupled to a semiconductor device and a transistor above the device level. the transistor has a body including a single crystal group iii-v or group iv semiconductor material, a source structure on a first portion of the body and a drain structure on a second portion of the body, where the source structure is separate from the drain structure. the transistor further includes a gate structure including a first gate structure portion in a recess in the body and a second gate structure portion between the source structure and the drain structure. a source contact is coupled with the source structure and a drain contact is coupled with the drain structure. the source contact is in contact with the metallization structure in the device level.