Intel corporation (20240114697). GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECTRIC CAPACITORS FOR EDRAM simplified abstract
Contents
- 1 GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECTRIC CAPACITORS FOR EDRAM
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECTRIC CAPACITORS FOR EDRAM - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECTRIC CAPACITORS FOR EDRAM
Organization Name
Inventor(s)
Shriram Shivaraman of Hillsboro OR (US)
Sou-Chi Chang of Portland OR (US)
Sourav Dutta of Hillsboro OR (US)
Uygar E. Avci of Portland OR (US)
GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECTRIC CAPACITORS FOR EDRAM - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240114697 titled 'GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECTRIC CAPACITORS FOR EDRAM
Simplified Explanation
The memory device described in the abstract consists of a first transistor for writing data, a ferroelectric capacitor for storing data, and a second transistor for reading the data stored on the ferroelectric capacitor.
- The memory device includes a first transistor as an access transistor for writing data.
- The memory device incorporates a ferroelectric capacitor for data storage.
- The memory device features a second transistor as a sense transistor for reading the data stored on the ferroelectric capacitor.
Potential Applications
This memory device technology could be applied in:
- Non-volatile memory systems
- Embedded systems
- IoT devices
Problems Solved
This technology helps address:
- Data retention issues in memory devices
- Improving data access speeds
- Enhancing overall memory performance
Benefits
The benefits of this technology include:
- Faster data access and retrieval
- Improved data storage efficiency
- Enhanced reliability and durability of memory devices
Potential Commercial Applications
This technology could be utilized in:
- Consumer electronics
- Automotive systems
- Medical devices
Possible Prior Art
One possible prior art for this technology could be the use of ferroelectric capacitors in memory devices for data storage.
Unanswered Questions
How does this memory device technology compare to traditional memory devices in terms of speed and efficiency?
This article does not provide a direct comparison between this memory device technology and traditional memory devices in terms of speed and efficiency.
What are the potential challenges in implementing this memory device technology on a large scale for commercial applications?
This article does not address the potential challenges in implementing this memory device technology on a large scale for commercial applications.
Original Abstract Submitted
embodiments disclosed herein include a memory device. in an embodiment, the memory device comprises a first transistor, where the first transistor is an access transistor to write data. in an embodiment, the memory device further comprises a ferroelectric capacitor for storing data. in an embodiment, the memory device further comprises a second transistor, where the second transistor is a sense transistor to read the data stored on the ferroelectric capacitor.
