Intel corporation (20240114695). HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS simplified abstract

HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS

Organization Name

intel corporation

Inventor(s)

Sou-Chi Chang of Portland OR (US)

Nazila Haratipour of Portland OR (US)

Christopher Neumann of Portland OR (US)

Shriram Shivaraman of Hillsboro OR (US)

Brian Doyle of Portland OR (US)

Sarah Atanasov of Beaverton OR (US)

Bernal Granados Alpizar of Beaverton OR (US)

Uygar Avci of Portland OR (US)

HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240114695 titled 'HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS

Simplified Explanation

The patent application describes apparatuses, memory systems, capacitor structures, and techniques related to anti-ferroelectric capacitors with a cerium oxide doped hafnium zirconium oxide based anti-ferroelectric.

• Layers of hafnium oxide, cerium oxide, and zirconium oxide are included between metal electrodes in the capacitor.
• The cerium in the cerium oxide provides a mid-gap state to protect the hafnium zirconium oxide during operation.

Potential Applications

The technology described in the patent application could be applied in:

• Advanced memory systems
• High-performance computing devices
• Energy storage applications

Problems Solved

The technology addresses the following issues:

• Protection of hafnium zirconium oxide during operation
• Enhanced performance and reliability of capacitors

Benefits

The benefits of this technology include:

• Improved capacitor performance
• Increased durability and longevity of memory systems
• Enhanced energy efficiency in electronic devices

Potential Commercial Applications

The technology could find commercial applications in:

• Semiconductor industry
• Electronics manufacturing sector
• Energy storage market

Possible Prior Art

One possible prior art could be the use of cerium oxide in capacitor structures for enhancing performance and reliability.

How does this technology compare to existing anti-ferroelectric capacitor designs?

This article does not provide a direct comparison with existing anti-ferroelectric capacitor designs. It would be helpful to understand the specific advantages and differences of this technology compared to others in the market.

What are the potential challenges in scaling up the production of capacitors using this technology?

The article does not address the scalability of production using this technology. It would be important to know the potential challenges and considerations in scaling up manufacturing processes for commercial applications.

Original Abstract Submitted

apparatuses, memory systems, capacitor structures, and techniques related to anti-ferroelectric capacitors having a cerium oxide doped hafnium zirconium oxide based anti-ferroelectric are described. a capacitor includes layers of hafnium oxide, cerium oxide, and zirconium oxide between metal electrodes. the cerium of the cerium oxide provides a mid gap state to protect the hafnium zirconium oxide during operation.