Intel corporation (20240114693). SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROELECTRIC CAPACITORS simplified abstract

SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROELECTRIC CAPACITORS

Organization Name

intel corporation

Inventor(s)

Christopher M. Neumann of Portland OR (US)

Brian Doyle of Portland OR (US)

Nazila Haratipour of Portland OR (US)

Shriram Shivaraman of Hillsboro OR (US)

Sou-Chi Chang of Portland OR (US)

Uygar E. Avci of Portland OR (US)

Eungnak Han of Portland OR (US)

Manish Chandhok of Beaverton OR (US)

Nafees Aminul Kabir of Hillsboro OR (US)

Gurpreet Singh of Beaverton OR (US)

SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROELECTRIC CAPACITORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240114693 titled 'SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROELECTRIC CAPACITORS

Simplified Explanation

The patent application describes an apparatus with multiple metal layers, metal vias, a ferroelectric material, and a hard mask material.

• The apparatus includes a first metal layer and a second metal layer stacked on top of each other.
• There are metal vias connecting the first and second metal layers perpendicularly.
• A third metal via extends through both metal layers.
• A ferroelectric material is located between the third metal via and the first and second metal layers.
• A hard mask material surrounds portions of the metal vias and the ferroelectric material.

Potential Applications

This technology could be used in memory devices, sensors, or other electronic components that require high-density and high-performance metal-insulator-metal structures.

Problems Solved

This technology solves the problem of integrating ferroelectric materials into metal-insulator-metal structures without compromising performance or reliability.

Benefits

The benefits of this technology include improved device performance, increased data storage capacity, and enhanced energy efficiency.

Potential Commercial Applications

"Enhancing Electronic Devices with Multi-Layer Metal Structures and Ferroelectric Materials"

Possible Prior Art

There may be prior art related to the integration of ferroelectric materials into electronic devices, but specific examples are not provided in the patent application.

How does this technology compare to existing metal-insulator-metal structures in terms of performance and reliability?

This article does not provide a direct comparison between this technology and existing metal-insulator-metal structures. Further research or testing would be needed to determine the advantages of this innovation.

What are the potential challenges in scaling up this technology for mass production?

The patent application does not address the scalability of this technology for commercial production. Factors such as cost, manufacturing processes, and compatibility with existing fabrication techniques could present challenges that need to be explored further.

Original Abstract Submitted

in one embodiment, an apparatus includes a first metal layer, a second metal layer above the first metal layer, a first metal via generally perpendicular with and connected to the first metal layer, a second metal via generally perpendicular with and connected to the second metal layer, a third metal via generally perpendicular with and extending through the first metal layer and the second metal layer, a ferroelectric material between the third metal via and the first metal layer and between the third metal via and the second metal layer, and a hard mask material around a portion of the first metal via above the first metal layer and the second metal layer, around a portion of the second metal via above the first metal layer and the second metal layer, and around a portion of the ferroelectric material above the first metal layer and the second metal layer.