Intel corporation (20240114692). INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS simplified abstract
Contents
- 1 INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS
Organization Name
Inventor(s)
Nazila Haratipour of Portland OR (US)
Uygar E. Avci of Portland OR (US)
Vachan Kumar of Hillsboro OR (US)
Yu-Ching Liao of Portland OR (US)
Ian Alexander Young of Olympia WA (US)
INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240114692 titled 'INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS
Simplified Explanation
The patent application describes inverted pillar capacitors with a u-shaped insulating layer oriented towards the substrate surface, allowing for greater capacitor density and eliminating the need for isolation dielectric regions between adjacent bottom electrodes.
- Inverted pillar capacitors have a u-shaped insulating layer opening towards the substrate surface.
- Adjacent inverted pillar capacitors have isolated bottom electrodes due to insulating layers and top electrodes.
- The insulating layer can be made of ferroelectric or antiferroelectric materials.
- Inverted pillar capacitors can be used in memory circuits or non-memory applications.
Potential Applications
The technology can be applied in memory circuits, such as DRAMs, and non-memory applications requiring high capacitor density.
Problems Solved
The technology solves the issue of limited capacitor density in traditional non-inverted pillar capacitors by eliminating the need for isolation dielectric regions between adjacent bottom electrodes.
Benefits
The benefits of this technology include increased capacitor density, simplified design, and improved performance in memory circuits and other applications.
Potential Commercial Applications
The technology can be utilized in the semiconductor industry for memory circuits, data storage devices, and other electronic applications requiring high-density capacitors.
Possible Prior Art
One possible prior art could be the use of traditional non-inverted pillar capacitors in memory circuits and other electronic devices.
Unanswered Questions
How does the orientation of the u-shaped insulating layer impact the performance of the inverted pillar capacitors?
The orientation of the u-shaped insulating layer allows for better isolation between adjacent bottom electrodes, but the specific effects on performance need further investigation.
What are the potential challenges in implementing inverted pillar capacitors in commercial electronic devices?
The integration of inverted pillar capacitors into existing semiconductor processes and devices may pose challenges in terms of compatibility, reliability, and cost-effectiveness.
Original Abstract Submitted
inverted pillar capacitors that have a u-shaped insulating layer are oriented with the u-shaped opening of the insulating layer opening toward the surface of the substrate on which the inverted pillar capacitors are formed. the bottom electrodes of adjacent inverted pillar capacitors are isolated from each other by the insulating layers of the adjacent electrodes and the top electrode that fills the volume between the electrodes. by avoiding the need to isolate adjacent bottom electrodes by an isolation dielectric region, inverted pillar capacitors can provide for a greater capacitor density relative to non-inverted pillar capacitors. the insulating layer in inverted pillar capacitors can comprise a ferroelectric material or an antiferroelectric material. the inverted pillar capacitor can be used in memory circuits (e.g., drams) or non-memory applications.
