Intel corporation (20240113233). WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS simplified abstract
Contents
- 1 WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS
Organization Name
Inventor(s)
Leonard P. Guler of Hillsboro OR (US)
Sukru Yemenicioglu of Portland OR (US)
Shengsi Liu of Portland OR (US)
Shao Ming Koh of Tigard OR (US)
Tahir Ghani of Portland OR (US)
WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113233 titled 'WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS
Simplified Explanation
The patent application describes a technique for creating a wall within a forkfet transistor structure, isolating two stacks of nanoribbons electrically.
- The wall is adjacent to a first stack of nanoribbons on one side and a second stack on the other side, isolating them.
- The wall extends beyond the top of the first stack of nanoribbons, ensuring complete isolation.
- The wall isolates a first gate metal coupled with the first stack of nanoribbons and a second gate metal coupled with the second stack of nanoribbons.
Potential Applications
This technology could be applied in the development of advanced transistor structures for high-performance electronic devices.
Problems Solved
This innovation solves the problem of electrical interference between different stacks of nanoribbons in a transistor structure.
Benefits
The technology allows for improved performance and efficiency in electronic devices by ensuring proper isolation between components.
Potential Commercial Applications
"Isolation Wall in Forkfet Transistor Structure: Commercial Applications"
Possible Prior Art
There may be prior art related to techniques for isolating components within transistor structures, but specific examples are not provided in the abstract.
Unanswered Questions
What materials are used to create the wall within the forkfet transistor structure?
The abstract does not specify the materials used for the wall construction.
How does the isolation wall impact the overall size and efficiency of the transistor structure?
The abstract does not mention the potential effects of the isolation wall on the size and efficiency of the transistor structure.
Original Abstract Submitted
embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for techniques for creating a wall within a forkfet transistor structure, where the wall is adjacent to a first stack of nanoribbons on a first side of the wall and a second stack of nanoribbons on a second side of the wall opposite the first side of the wall. in embodiments, the wall extends beyond the top of the first stack of nanoribbons and electrically isolates a first gate metal coupled with the first stack of nanoribbons and a second gate metal coupled with the second stack of nanoribbons from each other. other embodiments may be described and/or claimed.
