Intel corporation (20240113161). TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN simplified abstract

TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN

Organization Name

intel corporation

Inventor(s)

Willy Rachmady of Beaverton OR (US)

Cheng-Ying Huang of Portland OR (US)

Matthew V. Metz of Portland OR (US)

Nicholas G. Minutillo of Beaverton OR (US)

Sean T. Ma of Portland OR (US)

Anand S. Murthy of Portland OR (US)

Jack T. Kavalieros of Portland OR (US)

Tahir Ghani of Portland OR (US)

Gilbert Dewey of Beaverton OR (US)

TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113161 titled 'TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN

Simplified Explanation

The abstract describes a patent application for a transistor with specific features related to the body, gate structure, source region, drain region, isolation regions, and transistor configuration.

• The transistor includes a body of semiconductor material with laterally opposed body sidewalls and a top surface.
• A gate structure contacts the top surface of the body.
• A source region contacts a first one of the laterally opposed body sidewalls, and a drain region contacts a second one of the laterally opposed body sidewalls.
• A first isolation region is under the source region and has a top surface in contact with a bottom surface of the source region.
• A second isolation region is under the drain region and has a top surface in contact with a bottom surface of the drain region.
• Depending on the transistor configuration, a major portion of the inner-facing sidewalls of the first and second isolation regions contact respective sidewalls of either a subfin structure (e.g., FinFET transistor configurations) or a lower portion of a gate structure (e.g., gate-all-around transistor configuration).

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1. 1. 1. Potential Applications

• Advanced semiconductor devices
• High-performance electronics

1. 1. 1. Problems Solved

• Improved transistor performance
• Enhanced integration of components

1. 1. 1. Benefits

• Increased efficiency
• Greater functionality
• Enhanced reliability

1. 1. 1. Potential Commercial Applications
         1. Optimizing Transistor Performance for Next-Generation Electronics

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1. 1. 1. Possible Prior Art

There may be prior art related to transistor configurations and isolation regions in semiconductor devices, but specific examples are not provided in the abstract.

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1. 1. 1. 1. Unanswered Questions

1. 1. 1. How does this transistor configuration compare to existing technologies in terms of performance and scalability?

The abstract does not provide a direct comparison with existing technologies, so it is unclear how this innovation stacks up against current solutions.

1. 1. 1. What specific industries or applications could benefit the most from this technology?

While the abstract mentions high-performance electronics as a potential application, it does not delve into specific industries or use cases where this technology could have the most significant impact.

Original Abstract Submitted

a transistor includes a body of semiconductor material, where the body has laterally opposed body sidewalls and a top surface. a gate structure contacts the top surface of the body. a source region contacts a first one of the laterally opposed body sidewalls and a drain region contacts a second one of the laterally opposed body sidewalls. a first isolation region is under the source region and has a top surface in contact with a bottom surface of the source region. a second isolation region is under the drain region and has a top surface in contact with a bottom surface of the drain region. depending on the transistor configuration, a major portion of the inner-facing sidewalls of the first and second isolation regions contact respective sidewalls of either a subfin structure (e.g., finfet transistor configurations) or a lower portion of a gate structure (e.g., gate-all-around transistor configuration).