Intel corporation (20240113128). HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS simplified abstract
Contents
- 1 HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS
Organization Name
Inventor(s)
Walid M. Hafez of Portland OR (US)
Jeng-Ya D. Yeh of Portland OR (US)
Curtis Tsai of Beaverton OR (US)
Joodong Park of Portland OR (US)
Chia-Hong Jan of Portland OR (US)
Gopinath Bhimarasetti of Portland OR (US)
HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113128 titled 'HIGH VOLTAGE THREE-DIMENSIONAL DEVICES HAVING DIELECTRIC LINERS
Simplified Explanation
The patent application describes high voltage three-dimensional devices with dielectric liners and methods of forming them.
- The semiconductor structure includes first and second fin active regions above a substrate, with gate structures composed of gate dielectrics, gate electrodes, and spacers.
- The gate dielectrics are made of multiple dielectric layers, providing enhanced performance and reliability.
- The technology enables the creation of high voltage three-dimensional devices with improved efficiency and stability.
Potential Applications
The technology can be applied in high voltage devices, power electronics, and integrated circuits requiring high performance and reliability.
Problems Solved
The technology addresses the challenges of high voltage operation, such as leakage currents, breakdown voltages, and reliability issues in semiconductor devices.
Benefits
The benefits of this technology include improved device performance, enhanced reliability, and increased efficiency in high voltage applications.
Potential Commercial Applications
Potential commercial applications include power management systems, electric vehicles, renewable energy systems, and industrial automation equipment.
Possible Prior Art
Prior art may include similar techniques for improving the performance and reliability of high voltage semiconductor devices, such as advanced gate dielectric structures and three-dimensional device architectures.
Unanswered Questions
How does the technology compare to existing solutions in terms of performance and cost-effectiveness?
The article does not provide a direct comparison with existing solutions in terms of performance and cost-effectiveness.
What are the specific manufacturing processes involved in forming the high voltage three-dimensional devices with dielectric liners?
The article does not detail the specific manufacturing processes involved in forming the high voltage three-dimensional devices with dielectric liners.
Original Abstract Submitted
high voltage three-dimensional devices having dielectric liners and methods of forming high voltage three-dimensional devices having dielectric liners are described. for example, a semiconductor structure includes a first fin active region and a second fin active region disposed above a substrate. a first gate structure is disposed above a top surface of, and along sidewalls of, the first fin active region. the first gate structure includes a first gate dielectric, a first gate electrode, and first spacers. the first gate dielectric is composed of a first dielectric layer disposed on the first fin active region and along sidewalls of the first spacers, and a second, different, dielectric layer disposed on the first dielectric layer and along sidewalls of the first spacers. the semiconductor structure also includes a second gate structure disposed above a top surface of, and along sidewalls of, the second fin active region. the second gate structure includes a second gate dielectric, a second gate electrode, and second spacers. the second gate dielectric is composed of the second dielectric layer disposed on the second fin active region and along sidewalls of the second spacers.
