Intel corporation (20240113101). CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION simplified abstract

CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION

Organization Name

intel corporation

Inventor(s)

Sourav Dutta of Hillsboro OR (US)

Nazila Haratipour of Portland OR (US)

Vachan Kumar of Hillsboro OR (US)

Uygar E. Avci of Portland OR (US)

Shriram Shivaraman of Hillsboro OR (US)

Sou-Chi Chang of Portland OR (US)

CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113101 titled 'CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION

Simplified Explanation

The abstract describes a semiconductor device with a capacitor structure integrated with the source or drain region. The device includes semiconductor regions, a gate structure, and a capacitor structure integrated with one of the source or drain regions.

• The semiconductor device has a capacitor structure integrated with the source or drain region.
• The capacitor structure includes a ferroelectric capacitor with a ferroelectric layer between the electrodes.

Potential Applications

The technology described in this patent application could be applied in the following areas:

• Integrated circuits
• Memory devices
• Semiconductor devices

Problems Solved

The technology addresses the following issues:

• Enhancing the performance of semiconductor devices
• Improving the efficiency of integrated circuits
• Increasing the storage capacity of memory devices

Benefits

The integration of a capacitor structure with the source or drain region offers the following benefits:

• Improved device performance
• Enhanced storage capabilities
• Increased efficiency of integrated circuits

Potential Commercial Applications

The technology has potential commercial applications in:

• Electronics industry
• Semiconductor manufacturing
• Memory device production

Possible Prior Art

One possible prior art in this field is the integration of capacitors in semiconductor devices for improved performance and efficiency.

What are the specific materials used in the ferroelectric layer of the capacitor structure?

The specific materials used in the ferroelectric layer of the capacitor structure are not mentioned in the abstract.

How does the integration of the capacitor structure with the source or drain region impact the overall size of the semiconductor device?

The abstract does not provide information on how the integration of the capacitor structure affects the size of the semiconductor device.

Original Abstract Submitted

techniques are provided herein to form a semiconductor device that has a capacitor structure integrated with the source or drain region of the semiconductor device. a given semiconductor device includes one or more semiconductor regions extending in a first direction between corresponding source or drain regions. a gate structure extends in a second direction over the one or more semiconductor regions. a capacitor structure is integrated with one of the source or drain regions of the integrated circuit such that a first electrode of the capacitor contacts the source or drain region and a second electrode of the capacitor contacts a conductive contact formed over the capacitor structure. the capacitor structure may include a ferroelectric capacitor having a ferroelectric layer between the electrodes.