Intel corporation (20240113025). ULTRA-THIN SEMI-METALS FOR LOW TEMPERATURE CONDUCTION simplified abstract
Contents
- 1 ULTRA-THIN SEMI-METALS FOR LOW TEMPERATURE CONDUCTION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ULTRA-THIN SEMI-METALS FOR LOW TEMPERATURE CONDUCTION - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
ULTRA-THIN SEMI-METALS FOR LOW TEMPERATURE CONDUCTION
Organization Name
Inventor(s)
Abhishek Anil Sharma of Portland OR (US)
Pushkar Ranade of San Jose CA (US)
Sagar Suthram of Portland OR (US)
Wilfred Gomes of Portland OR (US)
Tahir Ghani of Portland OR (US)
Anand S. Murthy of Portland OR (US)
ULTRA-THIN SEMI-METALS FOR LOW TEMPERATURE CONDUCTION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113025 titled 'ULTRA-THIN SEMI-METALS FOR LOW TEMPERATURE CONDUCTION
Simplified Explanation
The integrated circuit structure described in the abstract includes an interlayer dielectric with an opening, a first layer lining the opening, a second layer lining the first layer, and a third layer over the second layer, where the second layer comprises a semi-metal or transition metal dichalcogenide (TMD).
- The integrated circuit structure comprises an interlayer dielectric (ILD) with an opening.
- A first layer lines the opening, and a second layer lines the first layer, with the second layer being a semi-metal or transition metal dichalcogenide (TMD).
- The integrated circuit structure may further include a third layer over the second layer.
Potential Applications
The technology described in this patent application could be applied in the following areas:
- Semiconductor manufacturing
- Integrated circuit design
- Nanotechnology research
Problems Solved
This technology helps address the following issues:
- Improving the performance and efficiency of integrated circuits
- Enhancing the reliability and durability of semiconductor devices
- Facilitating the development of advanced electronic systems
Benefits
The use of semi-metal or transition metal dichalcogenide (TMD) in the integrated circuit structure offers several benefits, including:
- Increased conductivity and electron mobility
- Reduced power consumption and heat generation
- Enhanced device miniaturization and performance
Potential Commercial Applications
With its potential advantages, this technology could find commercial applications in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art related to this technology is the use of TMDs in electronic devices and semiconductor components. Research and development in the field of 2D materials have explored the properties and applications of TMDs in various electronic devices.
Original Abstract Submitted
embodiments disclosed herein include an integrated circuit structure. in an embodiment, the integrated circuit structure comprises an interlayer dielectric (ild), and an opening in the ild. in an embodiment, a first layer lines the opening, and a second layer lines the first layer. in an embodiment, the second layer comprises a semi-metal or transition metal dichalcogenide (tmd). the integrated circuit structure may further comprise a third layer over the second layer.
