Intel corporation (20240105860). LOW TEMPERATURE VARACTORS USING VARIABLE CAPACITANCE MATERIALS simplified abstract
Contents
- 1 LOW TEMPERATURE VARACTORS USING VARIABLE CAPACITANCE MATERIALS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 LOW TEMPERATURE VARACTORS USING VARIABLE CAPACITANCE MATERIALS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
LOW TEMPERATURE VARACTORS USING VARIABLE CAPACITANCE MATERIALS
Organization Name
Inventor(s)
Abhishek Anil Sharma of Portland OR (US)
Tahir Ghani of Portland OR (US)
WIlfred Gomes of Portland OR (US)
Anand Murthy of Portland OR (US)
Sagar Suthram of Portland OR (US)
Pushkar Ranade of San Jose CA (US)
LOW TEMPERATURE VARACTORS USING VARIABLE CAPACITANCE MATERIALS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105860 titled 'LOW TEMPERATURE VARACTORS USING VARIABLE CAPACITANCE MATERIALS
Simplified Explanation
The abstract describes an integrated circuit (IC) die with varactor devices, one of which includes a multi-layer stack of ferroelectric material between two electrodes.
- Varactor devices in the IC die have a structure with a first electrode, a second electrode, and a ferroelectric material stack.
- The ferroelectric material stack serves as a variable capacitance material in the varactor device.
Potential Applications
The technology can be used in:
- Radio frequency (RF) circuits
- Tunable filters
- Voltage-controlled oscillators
Problems Solved
This technology addresses:
- Improved tuning range in RF circuits
- Enhanced performance in tunable filters
- Increased flexibility in voltage-controlled oscillators
Benefits
The benefits of this technology include:
- Higher efficiency in RF circuits
- Better signal filtering capabilities
- Greater frequency agility in voltage-controlled oscillators
Potential Commercial Applications
The technology can be applied in:
- Wireless communication devices
- Radar systems
- Satellite communication equipment
Possible Prior Art
One possible prior art could be the use of varactor devices with different dielectric materials for tuning applications.
What are the manufacturing processes involved in creating the multi-layer stack of ferroelectric material in the varactor device?
The manufacturing processes for creating the multi-layer stack of ferroelectric material may involve deposition techniques such as sputtering, chemical vapor deposition (CVD), or physical vapor deposition (PVD) to build up the layers of the material.
How does the ferroelectric material stack improve the performance of the varactor device compared to traditional varactor devices?
The ferroelectric material stack offers variable capacitance properties that can be controlled by an external voltage, allowing for more precise tuning and improved performance in RF circuits and other applications.
Original Abstract Submitted
an integrated circuit (ic) die includes a plurality of varactor devices, where at least one varactor of the plurality of varactor devices comprises a first electrode, a second electrode, and a multi-layer stack of ferroelectric material (e.g., ferroelectric variable capacitance material) disposed between the first and second electrodes. other embodiments are disclosed and claimed.
