Intel corporation (20240105822). STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEVICES simplified abstract

STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEVICES

Organization Name

intel corporation

Inventor(s)

Kevin P. O'brien of Portland OR (US)

Brandon Holybee of Portland OR (US)

Carly Rogan of North Plains OR (US)

Dmitri Evgenievich Nikonov of Beaverton OR (US)

Punyashloka Debashis of Hillsboro OR (US)

Rachel A. Steinhardt of Beaverton OR (US)

Tristan A. Tronic of Aloha OR (US)

Ian Alexander Young of Olympia WA (US)

Marko Radosavljevic of Portland OR (US)

John J. Plombon of Portland OR (US)

STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105822 titled 'STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEVICES

Simplified Explanation

The abstract describes a transistor device with multiple layers of perovskite materials, including gate materials, ferroelectric materials, and semiconductor materials, as well as source/drain metals and dielectric materials.

• The transistor device includes multiple layers of perovskite materials.
• The layers consist of gate materials, ferroelectric materials, semiconductor materials, source/drain metals, and dielectric materials.

Potential Applications

The technology described in this patent application could potentially be applied in the following areas:

• Advanced electronics
• Semiconductor devices
• Memory storage devices

Problems Solved

This technology addresses the following issues:

• Improving transistor performance
• Enhancing device efficiency
• Increasing data storage capacity

Benefits

The benefits of this technology include:

• Higher speed and performance
• Lower power consumption
• Increased reliability and durability

Potential Commercial Applications

The potential commercial applications of this technology could include:

• Consumer electronics
• Telecommunications
• Information technology

Possible Prior Art

One possible prior art for this technology could be the use of perovskite materials in semiconductor devices. Previous research and patents may exist in this field, focusing on similar materials and structures.

Unanswered Questions

How does the performance of this transistor device compare to traditional silicon-based transistors?

The article does not provide a direct comparison between the performance of this perovskite-based transistor device and traditional silicon-based transistors.

What are the potential challenges in scaling up production of this technology for commercial use?

The article does not address the potential challenges in scaling up production of this perovskite-based transistor device for commercial applications.

Original Abstract Submitted

a transistor device may include a first perovskite gate material, a first perovskite ferroelectric material on the first gate material, a first perovskite semiconductor material on the first ferroelectric material, a second perovskite ferroelectric material on the first semiconductor material, a second perovskite gate material on the second ferroelectric material, a third perovskite ferroelectric material on the second gate material, a second perovskite semiconductor material on the third ferroelectric material, a fourth perovskite ferroelectric material on the second semiconductor material, a third perovskite gate material on the fourth ferroelectric material, a first source/drain metal adjacent a first side of each of the first semiconductor material and the second semiconductor material, a second source/drain metal adjacent a second side opposite the first side of each of the first semiconductor material and the second semiconductor material, and dielectric materials between the source/drain metals and the gate materials.