Intel corporation (20240105508). INTEGRATED CIRCUIT DEVICES WITH CONTACTS USING NITRIDIZED MOLYBDENUM simplified abstract

INTEGRATED CIRCUIT DEVICES WITH CONTACTS USING NITRIDIZED MOLYBDENUM

Organization Name

intel corporation

Inventor(s)

Jitendra Kumar Jha of Hillsboro OR (US)

Justin Mueller of Portland OR (US)

Nazila Haratipour of Portland OR (US)

Gilbert W. Dewey of Beaverton OR (US)

Chi-Hing Choi of Portland OR (US)

Jack T. Kavalieros of Portland OR (US)

Siddharth Chouksey of Portland OR (US)

Nancy Zelick of Portland OR (US)

Jean-Philippe Turmaud of Portland OR (US)

I-Cheng Tung of Hillsboro OR (US)

Blake Bluestein of Hillsboro OR (US)

INTEGRATED CIRCUIT DEVICES WITH CONTACTS USING NITRIDIZED MOLYBDENUM - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105508 titled 'INTEGRATED CIRCUIT DEVICES WITH CONTACTS USING NITRIDIZED MOLYBDENUM

Simplified Explanation

The abstract describes an integrated circuit (IC) device with contacts using nitridized molybdenum, which can improve electrical performance and prevent oxidation during fabrication.

• The contact arrangement for an IC device includes molybdenum in a first layer and a second layer with nitrogen.
• The first layer of molybdenum has a thickness between 5-16 nanometers, while the second layer with nitrogen has a thickness between 0.5-2.5 nanometers.
• The contact also includes a fill material, such as an electrically conductive material, with the second layer in contact with it.
• The nitridized molybdenum has low resistance, improving the electrical performance of the contact and preventing oxidation during fabrication.

Potential Applications

The technology can be applied in the semiconductor industry for manufacturing IC devices with improved electrical performance and reliability.

Problems Solved

This technology addresses the issues of high resistance and oxidation during the fabrication of contacts in IC devices, leading to enhanced performance and longevity.

Benefits

The use of nitridized molybdenum in contacts improves electrical conductivity, reduces resistance, and prevents oxidation, resulting in more efficient and reliable IC devices.

Potential Commercial Applications

The technology can be utilized in the production of various electronic devices, including smartphones, computers, and other consumer electronics, to enhance their performance and durability.

Possible Prior Art

One possible prior art could be the use of other materials for contacts in IC devices, which may not offer the same level of electrical performance and oxidation resistance as nitridized molybdenum.

How does the nitridized molybdenum compare to other materials commonly used in IC device contacts in terms of performance and reliability?

The abstract does not provide a direct comparison between nitridized molybdenum and other materials, so further research or testing may be needed to determine the advantages and disadvantages of using this technology.

What specific fabrication processes are required to incorporate nitridized molybdenum into IC device contacts, and are there any potential challenges or limitations in implementing this technology on a larger scale?

The abstract does not detail the specific fabrication processes involved, so additional information may be necessary to understand the practical implications and feasibility of using nitridized molybdenum in mass production of IC devices.

Original Abstract Submitted

disclosed herein are integrated circuit (ic) devices with contacts using nitridized molybdenum. for example, a contact arrangement for an ic device may include a semiconductor material and a contact extending into a portion of the semiconductor material. the contact may include molybdenum. the molybdenum may be in a first layer and a second layer, where the second layer may further include nitrogen. the first layer may have a thickness between about 5 nanometers and 16 nanometers, and the second layer may have a thickness between about 0.5 nanometers to 2.5 nanometers. the contact may further include a fill material (e.g., an electrically conductive material) and the second layer may be in contact with the fill material. the molybdenum may have a low resistance, and thus may improve the electrical performance of the contact. the nitridized molybdenum may prevent oxidation during the fabrication of the contact.