Intel corporation (20240105248). TCAM WITH HYSTERETIC OXIDE MEMORY CELLS simplified abstract
Contents
- 1 TCAM WITH HYSTERETIC OXIDE MEMORY CELLS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TCAM WITH HYSTERETIC OXIDE MEMORY CELLS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
TCAM WITH HYSTERETIC OXIDE MEMORY CELLS
Organization Name
Inventor(s)
Abhishek Anil Sharma of Portland OR (US)
Tahir Ghani of Portland OR (US)
Sagar Suthram of Portland OR (US)
Anand Murthy of Portland OR (US)
Wilfred Gomes of Portland OR (US)
Pushkar Ranade of San Jose CA (US)
TCAM WITH HYSTERETIC OXIDE MEMORY CELLS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105248 titled 'TCAM WITH HYSTERETIC OXIDE MEMORY CELLS
Simplified Explanation
The abstract describes an integrated circuit (IC) die with memory cells utilizing a hysteretic-oxide material, potentially for use in a ternary content-addressable memory (TCAM).
- Memory cells in the IC die contain a storage circuit made of hysteretic-oxide material.
- The IC die may be used in a ternary content-addressable memory (TCAM) application.
Potential Applications
The technology could be applied in:
- High-speed data processing systems
- Advanced computing devices
Problems Solved
The technology addresses issues related to:
- Memory cell performance and efficiency
- Data retrieval speed and accuracy
Benefits
The benefits of this technology include:
- Improved memory cell reliability
- Enhanced data processing capabilities
Potential Commercial Applications
A potential commercial application for this technology could be in:
- Data centers for high-performance computing tasks
Possible Prior Art
Prior art may include:
- Previous memory cell technologies utilizing different materials
- Existing TCAM designs
Unanswered Questions
How does the hysteretic-oxide material compare to traditional memory cell materials in terms of performance and longevity?
The abstract does not provide a direct comparison between the hysteretic-oxide material and traditional memory cell materials. Further research or testing may be needed to determine the advantages and disadvantages of using this material.
What specific advancements in TCAM technology does the integration of hysteretic-oxide memory cells offer?
While the abstract mentions the potential use of hysteretic-oxide memory cells in a TCAM, it does not elaborate on the specific improvements or advancements this integration may bring to TCAM technology. Additional information or studies may be required to fully understand the impact of this innovation on TCAM performance.
Original Abstract Submitted
an integrated circuit (ic) die includes a substrate and an array of memory cells formed in or on the substrate with a memory cell of the array of memory cells that includes a storage circuit that comprises a hysteretic-oxide material. a ternary content-addressable memory (tcam) may utilize hysteretic-oxide memory cells. other embodiments are disclosed and claimed.
