INNER SPACER FOR SEMICONDUCTOR DEVICE: abstract simplified (17716192)

• This abstract for appeared for patent application number 17716192 Titled 'INNER SPACER FOR SEMICONDUCTOR DEVICE'

Simplified Explanation

The abstract describes a device that includes a semiconductor unit with various components. These components include a first source/drain portion, a second source/drain portion, and at least one nanosheet segment that connects the first and second source/drain portions. The device also has a gate portion that surrounds the nanosheet segment. Additionally, there are two inner spacer portions that separate the gate portion from the first and second source/drain portions. These inner spacer portions have a carbon-rich region that faces the gate portion.

Original Abstract Submitted

A device includes at least one semiconductor unit which includes a first source/drain portion, a second source/drain portion, at least one nanosheet segment which is disposed to interconnect the first and second source/drain portions, a gate portion disposed around the at least one nanosheet segment, and a first inner spacer portion and a second inner spacer portion which are disposed to separate the gate portion from the first and second source/drain portions, respectively. Each of the first and second inner spacer portions has a carbon-rich region which confronts the gate portion.