Hyundai motor company (20240136355). POWER SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 POWER SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 POWER SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
POWER SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jong Seok Lee of Suwon-si (KR)
POWER SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136355 titled 'POWER SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a power semiconductor device with a silicon carbide (SiC) semiconductor layer, buried gates, base regions, source regions, and a source electrode.
- Silicon carbide (SiC) semiconductor layer
- Buried gates for control
- Base regions with different conductive types
- Source regions for electrical contact
- Source electrode for overall connection
Potential Applications
The technology can be applied in:
- Power electronics
- Electric vehicles
- Renewable energy systems
Problems Solved
The device addresses issues such as:
- High power losses
- Inefficient energy conversion
- Limited power handling capacity
Benefits
The benefits of this technology include:
- Higher efficiency
- Increased power density
- Improved reliability
Potential Commercial Applications
The device can be used in:
- Power inverters
- Motor drives
- Solar inverters
Possible Prior Art
Prior art may include:
- Silicon-based power devices
- Traditional gate structures
Unanswered Questions
1. How does the device perform under high temperature conditions? 2. What is the cost comparison between this technology and traditional silicon-based devices?
Original Abstract Submitted
a power semiconductor device includes a silicon carbide (sic) semiconductor layer, a first gate and a second gate buried in the semiconductor layer, a first base region positioned at least at one side of the first gate and having a first conductive type, a second base region positioned at least at one side of the second gate and a second conductive type, a first source region positioned at least at one side of the first gate to make contact with the first base region and the second base region and having the second conductive type, a second source region positioned at least at one side of the second gate to make contact with the first base region and the second base region and having the first conductive type, and a source electrode positioned over the semiconductor layer to make contact with the first source region and the second source region.
