View source for EXTREME ULTRAVIOLET LITHOGRAPHY METHOD, EXTREME ULTRAVIOLET MASK AND FORMATION METHOD THEREOF: abstract simplified (18334640)

*This abstract for appeared for patent application  number 18334640 Titled 'EXTREME ULTRAVIOLET LITHOGRAPHY METHOD, EXTREME ULTRAVIOLET MASK AND FORMATION METHOD THEREOF'

==Simplified Explanation==

The abstract describes a method for creating an extreme ultraviolet (EUV) mask. This involves creating a stack of alternating layers of molybdenum (Mo) and silicon (Si) on a mask substrate. A layer of ruthenium is then added on top of the stack, which is doped with a halogen element, a pentavalent element, a hexavalent element, or a combination of these elements. An absorber layer is then formed over the ruthenium layer, and the absorber layer is etched to create a pattern.


==Original Abstract Submitted==

A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer.