Difference between revisions of "CHANGXIN MEMORY TECHNOLOGIES, INC. patent applications published on November 30th, 2023"

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==Patent applications for CHANGXIN MEMORY TECHNOLOGIES, INC. on November 30th, 2023==
 
==Patent applications for CHANGXIN MEMORY TECHNOLOGIES, INC. on November 30th, 2023==
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===PACKAGE SUBSTRATE, APPARATUS FOR TESTING POWER SUPPLY NOISE AND METHOD FOR TESTING POWER SUPPLY NOISE ([[US Patent Application 17951625. PACKAGE SUBSTRATE, APPARATUS FOR TESTING POWER SUPPLY NOISE AND METHOD FOR TESTING POWER SUPPLY NOISE simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|17951625]])===
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'''Main Inventor'''
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Honglong SHI
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===METHOD AND DEVICE FOR EVALUATING PERFORMANCE OF SEQUENTIAL LOGIC ELEMENT ([[US Patent Application 17872479. METHOD AND DEVICE FOR EVALUATING PERFORMANCE OF SEQUENTIAL LOGIC ELEMENT simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|17872479]])===
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'''Main Inventor'''
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Zengquan WU
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===DATA PROCESSING CIRCUITRY AND METHOD, AND SEMICONDUCTOR MEMORY ([[US Patent Application 18448891. DATA PROCESSING CIRCUITRY AND METHOD, AND SEMICONDUCTOR MEMORY simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18448891]])===
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'''Main Inventor'''
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Yinchuan GU
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===METHOD AND APPARATUS FOR TESTING COMMAND, TEST PLATFORM, AND READABLE STORAGE MEDIUM ([[US Patent Application 17899056. METHOD AND APPARATUS FOR TESTING COMMAND, TEST PLATFORM, AND READABLE STORAGE MEDIUM simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|17899056]])===
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'''Main Inventor'''
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Yu LI
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===METHOD AND APPARATUS FOR CHECKING SIGNAL LINE ([[US Patent Application 17898727. METHOD AND APPARATUS FOR CHECKING SIGNAL LINE simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|17898727]])===
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'''Main Inventor'''
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Min MIN
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===TIMING SEQUENCE CONTROL CIRCUIT, TIMING SEQUENCE CONTROL METHOD, AND SEMICONDUCTOR MEMORY ([[US Patent Application 18169159. TIMING SEQUENCE CONTROL CIRCUIT, TIMING SEQUENCE CONTROL METHOD, AND SEMICONDUCTOR MEMORY simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18169159]])===
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'''Main Inventor'''
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Kangling JI
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===REFRESH ADDRESS GENERATION CIRCUIT AND METHOD, MEMORY, AND ELECTRONIC DEVICE ([[US Patent Application 18332706. REFRESH ADDRESS GENERATION CIRCUIT AND METHOD, MEMORY, AND ELECTRONIC DEVICE simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18332706]])===
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'''Main Inventor'''
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Yinchuan GU
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===REFRESH ADDRESS GENERATION CIRCUIT ([[US Patent Application 18153312. REFRESH ADDRESS GENERATION CIRCUIT simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18153312]])===
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'''Main Inventor'''
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Yinchuan GU
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===REFRESH CONTROL CIRCUIT, MEMORY, AND REFRESH CONTROL METHOD ([[US Patent Application 18157558. REFRESH CONTROL CIRCUIT, MEMORY, AND REFRESH CONTROL METHOD simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18157558]])===
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'''Main Inventor'''
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Liang ZHANG
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===SIGNAL SAMPLING CIRCUIT AND SEMICONDUCTOR MEMORY ([[US Patent Application 18449060. SIGNAL SAMPLING CIRCUIT AND SEMICONDUCTOR MEMORY simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18449060]])===
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'''Main Inventor'''
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Zequn HUANG
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===POWER SUPPLY SWITCHING CIRCUIT AND MEMORY ([[US Patent Application 18327062. POWER SUPPLY SWITCHING CIRCUIT AND MEMORY simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18327062]])===
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'''Main Inventor'''
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Yupeng FAN
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===SIGNAL SAMPLING CIRCUIT AND SEMICONDUCTOR MEMORY ([[US Patent Application 18448897. SIGNAL SAMPLING CIRCUIT AND SEMICONDUCTOR MEMORY simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18448897]])===
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'''Main Inventor'''
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Zequn HUANG
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===METHOD FOR SENSE MARGIN DETECTION FOR SENSE AMPLIFIER AND ELECTRONIC DEVICE ([[US Patent Application 17868774. METHOD FOR SENSE MARGIN DETECTION FOR SENSE AMPLIFIER AND ELECTRONIC DEVICE simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|17868774]])===
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'''Main Inventor'''
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Xikun CHU
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===ANTI-FUSE STRUCTURE, ANTI-FUSE ARRAY AND MEMORY ([[US Patent Application 17929747. ANTI-FUSE STRUCTURE, ANTI-FUSE ARRAY AND MEMORY simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|17929747]])===
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'''Main Inventor'''
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Chuangming HOU
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===CIRCUIT FOR CALIBRATION CONTROL, ELECTRONIC DEVICE AND METHOD FOR CALIBRATION CONTROL ([[US Patent Application 18448340. CIRCUIT FOR CALIBRATION CONTROL, ELECTRONIC DEVICE AND METHOD FOR CALIBRATION CONTROL simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18448340]])===
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'''Main Inventor'''
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Kai TIAN
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===SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF ([[US Patent Application 17815623. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|17815623]])===
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'''Main Inventor'''
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Yi TANG
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===SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE ([[US Patent Application 18167024. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18167024]])===
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'''Main Inventor'''
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Peimeng WANG
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===SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF ([[US Patent Application 17887775. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|17887775]])===
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'''Main Inventor'''
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Yongxiang LI
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===SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE ([[US Patent Application 18163135. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18163135]])===
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'''Main Inventor'''
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YOUMING LIU
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===SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF ([[US Patent Application 17878046. SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|17878046]])===
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'''Main Inventor'''
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Xiaojie LI
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===SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF ([[US Patent Application 18150885. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18150885]])===
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'''Main Inventor'''
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Yang CHEN
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===SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE ([[US Patent Application 18093779. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18093779]])===
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'''Main Inventor'''
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Xiaojie LI
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===METHOD FOR FORMING CAPACITOR AND SEMICONDUCTOR DEVICE ([[US Patent Application 18446507. METHOD FOR FORMING CAPACITOR AND SEMICONDUCTOR DEVICE simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18446507]])===
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'''Main Inventor'''
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Xiaoling WANG
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===SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF ([[US Patent Application 17816130. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|17816130]])===
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'''Main Inventor'''
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YOUMING LIU
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===MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND MEMORY ([[US Patent Application 18363901. MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND MEMORY simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18363901]])===
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'''Main Inventor'''
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Yizhi ZENG
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===SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE ([[US Patent Application 18446514. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18446514]])===
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'''Main Inventor'''
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Shuai GUO
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===SEMICONDUCTOR STRUCTURE ([[US Patent Application 17879913. SEMICONDUCTOR STRUCTURE simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|17879913]])===
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'''Main Inventor'''
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Jianfeng XIAO
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===TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND MEMORY ([[US Patent Application 17816156. TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND MEMORY simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|17816156]])===
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'''Main Inventor'''
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YOUMING LIU
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===TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND MEMORY ([[US Patent Application 17816435. TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND MEMORY simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|17816435]])===
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'''Main Inventor'''
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YOUMING LIU
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===SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF ([[US Patent Application 17816436. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|17816436]])===
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'''Main Inventor'''
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YOUMING LIU
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===METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE ([[US Patent Application 17929842. METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|17929842]])===
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'''Main Inventor'''
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Yi TANG
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===SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF ([[US Patent Application 17813409. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|17813409]])===
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'''Main Inventor'''
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Youming Liu
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===MEMORY, SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME ([[US Patent Application 17885727. MEMORY, SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|17885727]])===
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'''Main Inventor'''
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Jingwen LU
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===SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME ([[US Patent Application 18151360. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18151360]])===
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'''Main Inventor'''
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Kanyu CAO
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===SEMICONDUCTOR STRUCTURE AND METHOD FOR PREPARING SAME ([[US Patent Application 17899684. SEMICONDUCTOR STRUCTURE AND METHOD FOR PREPARING SAME simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|17899684]])===
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'''Main Inventor'''
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Min LI
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===TRANSISTOR, MANUFACTURING METHOD THEREOF, AND MEMORY ([[US Patent Application 18151434. TRANSISTOR, MANUFACTURING METHOD THEREOF, AND MEMORY simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18151434]])===
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'''Main Inventor'''
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CHUN-WEI LIAO
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===METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND MEMORY ([[US Patent Application 18363819. METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND MEMORY simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18363819]])===
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'''Main Inventor'''
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Jingwen LU
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===SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF ([[US Patent Application 17816438. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|17816438]])===
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'''Main Inventor'''
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YOUMING LIU
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===METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE ([[US Patent Application 18363833. METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18363833]])===
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'''Main Inventor'''
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Jingwen LU
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===SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME ([[US Patent Application 18169839. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)|18169839]])===
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'''Main Inventor'''
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Chao LIN

Latest revision as of 06:36, 7 December 2023

Summary of the patent applications from CHANGXIN MEMORY TECHNOLOGIES, INC. on November 30th, 2023

CHANGXIN MEMORY TECHNOLOGIES, INC. has recently filed several patents related to semiconductor structures and manufacturing methods. These patents aim to improve the performance, functionality, and capacity of memory devices.

Summary: - The patents describe various semiconductor structures consisting of bonded layers, redistribution lines, word lines, bit lines, and isolation layers. - The manufacturing methods involve forming active areas, word line structures, bit line structures, and capacitor structures on substrates. - The designs focus on optimizing the contact between different layers, improving the storage capacity of capacitances, and enhancing production efficiency. - Notable applications include memory cell arrays, control chips, storage chips, and transistor designs with metal oxide semiconductor layers.

Bullet points:

  • CHANGXIN MEMORY TECHNOLOGIES, INC. has filed recent patents related to semiconductor structures and manufacturing methods.
  • The patents aim to improve the performance, functionality, and capacity of memory devices.
  • The designs involve bonded layers, redistribution lines, word lines, bit lines, and isolation layers.
  • The manufacturing methods include forming active areas, word line structures, bit line structures, and capacitor structures on substrates.
  • The patents focus on optimizing contact between layers, increasing storage capacity, and enhancing production efficiency.
  • Applications include memory cell arrays, control chips, storage chips, and transistor designs with metal oxide semiconductor layers.

Notable applications:

  • Memory cell arrays with optimized word lines and bit lines.
  • Transistor designs utilizing metal oxide semiconductor layers in the channel layer.
  • Capacitor structures with increased storage capacity and improved production efficiency.



Contents

Patent applications for CHANGXIN MEMORY TECHNOLOGIES, INC. on November 30th, 2023

PACKAGE SUBSTRATE, APPARATUS FOR TESTING POWER SUPPLY NOISE AND METHOD FOR TESTING POWER SUPPLY NOISE (17951625)

Main Inventor

Honglong SHI


METHOD AND DEVICE FOR EVALUATING PERFORMANCE OF SEQUENTIAL LOGIC ELEMENT (17872479)

Main Inventor

Zengquan WU


DATA PROCESSING CIRCUITRY AND METHOD, AND SEMICONDUCTOR MEMORY (18448891)

Main Inventor

Yinchuan GU


METHOD AND APPARATUS FOR TESTING COMMAND, TEST PLATFORM, AND READABLE STORAGE MEDIUM (17899056)

Main Inventor

Yu LI


METHOD AND APPARATUS FOR CHECKING SIGNAL LINE (17898727)

Main Inventor

Min MIN


TIMING SEQUENCE CONTROL CIRCUIT, TIMING SEQUENCE CONTROL METHOD, AND SEMICONDUCTOR MEMORY (18169159)

Main Inventor

Kangling JI


REFRESH ADDRESS GENERATION CIRCUIT AND METHOD, MEMORY, AND ELECTRONIC DEVICE (18332706)

Main Inventor

Yinchuan GU


REFRESH ADDRESS GENERATION CIRCUIT (18153312)

Main Inventor

Yinchuan GU


REFRESH CONTROL CIRCUIT, MEMORY, AND REFRESH CONTROL METHOD (18157558)

Main Inventor

Liang ZHANG


SIGNAL SAMPLING CIRCUIT AND SEMICONDUCTOR MEMORY (18449060)

Main Inventor

Zequn HUANG


POWER SUPPLY SWITCHING CIRCUIT AND MEMORY (18327062)

Main Inventor

Yupeng FAN


SIGNAL SAMPLING CIRCUIT AND SEMICONDUCTOR MEMORY (18448897)

Main Inventor

Zequn HUANG


METHOD FOR SENSE MARGIN DETECTION FOR SENSE AMPLIFIER AND ELECTRONIC DEVICE (17868774)

Main Inventor

Xikun CHU


ANTI-FUSE STRUCTURE, ANTI-FUSE ARRAY AND MEMORY (17929747)

Main Inventor

Chuangming HOU


CIRCUIT FOR CALIBRATION CONTROL, ELECTRONIC DEVICE AND METHOD FOR CALIBRATION CONTROL (18448340)

Main Inventor

Kai TIAN


SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF (17815623)

Main Inventor

Yi TANG


SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE (18167024)

Main Inventor

Peimeng WANG


SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF (17887775)

Main Inventor

Yongxiang LI


SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE (18163135)

Main Inventor

YOUMING LIU


SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF (17878046)

Main Inventor

Xiaojie LI


SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF (18150885)

Main Inventor

Yang CHEN


SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE (18093779)

Main Inventor

Xiaojie LI


METHOD FOR FORMING CAPACITOR AND SEMICONDUCTOR DEVICE (18446507)

Main Inventor

Xiaoling WANG


SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF (17816130)

Main Inventor

YOUMING LIU


MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND MEMORY (18363901)

Main Inventor

Yizhi ZENG


SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE (18446514)

Main Inventor

Shuai GUO


SEMICONDUCTOR STRUCTURE (17879913)

Main Inventor

Jianfeng XIAO


TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND MEMORY (17816156)

Main Inventor

YOUMING LIU


TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND MEMORY (17816435)

Main Inventor

YOUMING LIU


SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF (17816436)

Main Inventor

YOUMING LIU


METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE (17929842)

Main Inventor

Yi TANG


SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF (17813409)

Main Inventor

Youming Liu


MEMORY, SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME (17885727)

Main Inventor

Jingwen LU


SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME (18151360)

Main Inventor

Kanyu CAO


SEMICONDUCTOR STRUCTURE AND METHOD FOR PREPARING SAME (17899684)

Main Inventor

Min LI


TRANSISTOR, MANUFACTURING METHOD THEREOF, AND MEMORY (18151434)

Main Inventor

CHUN-WEI LIAO


METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND MEMORY (18363819)

Main Inventor

Jingwen LU


SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF (17816438)

Main Inventor

YOUMING LIU


METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE (18363833)

Main Inventor

Jingwen LU


SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME (18169839)

Main Inventor

Chao LIN

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