CHANGXIN MEMORY TECHNOLOGIES, INC. patent applications published on November 30th, 2023

Summary of the patent applications from CHANGXIN MEMORY TECHNOLOGIES, INC. on November 30th, 2023

CHANGXIN MEMORY TECHNOLOGIES, INC. has recently filed several patents related to semiconductor structures and manufacturing methods. These patents aim to improve the performance, functionality, and capacity of memory devices.

Summary: - The patents describe various semiconductor structures consisting of bonded layers, redistribution lines, word lines, bit lines, and isolation layers. - The manufacturing methods involve forming active areas, word line structures, bit line structures, and capacitor structures on substrates. - The designs focus on optimizing the contact between different layers, improving the storage capacity of capacitances, and enhancing production efficiency. - Notable applications include memory cell arrays, control chips, storage chips, and transistor designs with metal oxide semiconductor layers.

Bullet points:

• CHANGXIN MEMORY TECHNOLOGIES, INC. has filed recent patents related to semiconductor structures and manufacturing methods.
• The patents aim to improve the performance, functionality, and capacity of memory devices.
• The designs involve bonded layers, redistribution lines, word lines, bit lines, and isolation layers.
• The manufacturing methods include forming active areas, word line structures, bit line structures, and capacitor structures on substrates.
• The patents focus on optimizing contact between layers, increasing storage capacity, and enhancing production efficiency.
• Applications include memory cell arrays, control chips, storage chips, and transistor designs with metal oxide semiconductor layers.

Notable applications:

• Memory cell arrays with optimized word lines and bit lines.
• Transistor designs utilizing metal oxide semiconductor layers in the channel layer.
• Capacitor structures with increased storage capacity and improved production efficiency.