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| − | '''Summary of the patent applications from CHANGXIN MEMORY TECHNOLOGIES, INC. on November 30th, 2023'''
| + | ==Patent applications for CHANGXIN MEMORY TECHNOLOGIES, INC. on November 30th, 2023== |
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| − | CHANGXIN MEMORY TECHNOLOGIES, INC. has recently filed several patents related to semiconductor structures and manufacturing methods. These patents aim to improve the performance, functionality, and capacity of memory devices.
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| − | Summary:
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| − | - The patents describe various semiconductor structures consisting of bonded layers, redistribution lines, word lines, bit lines, and isolation layers.
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| − | - The manufacturing methods involve forming active areas, word line structures, bit line structures, and capacitor structures on substrates.
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| − | - The designs focus on optimizing the contact between different layers, improving the storage capacity of capacitances, and enhancing production efficiency.
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| − | - Notable applications include memory cell arrays, control chips, storage chips, and transistor designs with metal oxide semiconductor layers.
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| − | Bullet points:
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| − | * CHANGXIN MEMORY TECHNOLOGIES, INC. has filed recent patents related to semiconductor structures and manufacturing methods.
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| − | * The patents aim to improve the performance, functionality, and capacity of memory devices.
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| − | * The designs involve bonded layers, redistribution lines, word lines, bit lines, and isolation layers.
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| − | * The manufacturing methods include forming active areas, word line structures, bit line structures, and capacitor structures on substrates.
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| − | * The patents focus on optimizing contact between layers, increasing storage capacity, and enhancing production efficiency.
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| − | * Applications include memory cell arrays, control chips, storage chips, and transistor designs with metal oxide semiconductor layers.
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| − | Notable applications:
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| − | * Memory cell arrays with optimized word lines and bit lines.
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| − | * Transistor designs utilizing metal oxide semiconductor layers in the channel layer.
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| − | * Capacitor structures with increased storage capacity and improved production efficiency.
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| − | ==Patent applications for changxin memory technologies, on November 30th, 2023==
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