20240018660. PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD simplified abstract (Tokyo Electron Limited)

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PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Organization Name

Tokyo Electron Limited

Inventor(s)

Hiroyuki Matsuura of Iwate (JP)

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240018660 titled 'PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Simplified Explanation

The abstract describes a plasma processing apparatus that includes a processing container with an opening in a sidewall. A partition wall covers the opening and defines an internal space that communicates with the inside of the processing container. A processing gas supply is configured to supply a processing gas to the internal space. A pair of electrodes is provided on the outer surfaces of opposing sidewalls of the partition wall. A shutter mechanism opens and closes a communication hole through which the inside of the processing container communicates with the internal space.

  • The apparatus is designed for plasma processing.
  • The processing container has an opening covered by a partition wall.
  • The partition wall creates an internal space that connects with the inside of the processing container.
  • A processing gas supply is used to introduce a processing gas into the internal space.
  • The partition wall has electrodes on its outer surfaces.
  • A shutter mechanism controls the communication between the inside of the processing container and the internal space.

Potential applications of this technology:

  • Plasma etching: The apparatus can be used for precise etching of materials using plasma.
  • Thin film deposition: It can be utilized for depositing thin films on substrates using plasma.
  • Surface modification: The apparatus can be employed for modifying the surface properties of materials using plasma.
  • Semiconductor manufacturing: It can be used in the fabrication of semiconductor devices.

Problems solved by this technology:

  • Contamination control: The partition wall and shutter mechanism prevent contamination of the processing container during plasma processing.
  • Process control: The apparatus allows for precise control of the processing gas and plasma parameters.
  • Efficiency improvement: The design of the apparatus enhances the efficiency of plasma processing.

Benefits of this technology:

  • Enhanced precision: The apparatus enables precise control and manipulation of plasma processes.
  • Reduced contamination: The partition wall and shutter mechanism minimize contamination risks during plasma processing.
  • Improved efficiency: The design of the apparatus enhances the efficiency of plasma processing, leading to faster and more effective results.


Original Abstract Submitted

a plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall configured to cover the opening and to define an internal space communicating with an inside of the processing container, a processing gas supply configured to supply a processing gas to the internal space, a pair of electrodes provided on outer surfaces of opposing sidewalls of the partition wall, and a shutter mechanism configured to open and close a communication hole through which the inside of the processing container communicates with the internal space.

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