18549647. PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE simplified abstract (Sony Semiconductor Solutions Corporation)

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PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE

Organization Name

Sony Semiconductor Solutions Corporation

Inventor(s)

HIDEKI Minari of KANAGAWA (JP)

RYOSUKE Matsumoto of KANAGAWA (JP)

PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18549647 titled 'PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE

Simplified Explanation

The patent application describes a photoelectric conversion element and an imaging device with improved image quality.

  • Photoelectric conversion element includes:
    • Photoelectric conversion layer with compound semiconductor material
    • Mesa portion on upper surface with compound semiconductor material having larger band gap energy
    • First electrode on mesa portion for reading converted charge
    • Transfer gate facing upper surface and sidewall of mesa portion

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      1. Potential Applications
  • High-quality imaging devices
  • Solar panels
  • Medical imaging equipment
      1. Problems Solved
  • Improved image quality
  • Enhanced efficiency of photoelectric conversion
  • Better performance in low light conditions
      1. Benefits
  • Higher resolution images
  • Increased sensitivity to light
  • Extended lifespan of imaging devices


Original Abstract Submitted

There is provide a photoelectric conversion element and an imaging device, in which image quality is capable of being improved. The photoelectric conversion element includes: a photoelectric conversion layer including a compound semiconductor material; a mesa portion disposed on a part of an upper surface side of the photoelectric conversion layer and including a compound semiconductor material having band gap energy larger than the band gap energy of the photoelectric conversion layer; a first electrode disposed on the mesa portion and configured to read charge photoelectrically converted in the photoelectric conversion layer via the mesa portion; and a transfer gate disposed to face a part of the upper surface side of the photoelectric conversion layer and at least a part of a sidewall of the mesa portion.

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